METHOD FOR PRODUCING SILICA PARTICLE, METHOD FOR PRODUCING SILICA SOL, POLISHING METHOD, METHOD FOR PRODUCING SEMICONDUCTOR WAFER AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE

To provide a method for producing silica particles that prevents the occurrence of fine particles.SOLUTION: A method for producing silica particles includes subjecting tetraalkoxysilane to hydrolysis reaction and condensation reaction, in which, from the start to end of the hydrolysis reaction and t...

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Bibliographische Detailangaben
Hauptverfasser:	YONEMORI TSUTOMU, KATO TOMOHIRO, SHIMADA YUTA, NAGINO YUKI, KAWASE YASUHIRO
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY COMPOUNDS THEREOF DRESSING OR CONDITIONING OF ABRADING SURFACES DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING INORGANIC CHEMISTRY MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS NON-METALLIC ELEMENTS PAINTS PERFORMING OPERATIONS POLISHES POLISHING SEMICONDUCTOR DEVICES TRANSPORTING
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Beschreibung
Zusammenfassung:	To provide a method for producing silica particles that prevents the occurrence of fine particles.SOLUTION: A method for producing silica particles includes subjecting tetraalkoxysilane to hydrolysis reaction and condensation reaction, in which, from the start to end of the hydrolysis reaction and the condensation reaction, changes in the concentration of water within the reaction system are controlled within 3 mass%. There are also provided: a polishing method that performs polishing with a polishing composition containing a silica sol obtained by the silica sol production method; a method for producing a semiconductor wafer, including the polishing method; and a method for producing a semiconductor device, including the polishing method.SELECTED DRAWING: None 【課題】微粒子の発生を抑制するシリカ粒子の製造方法を提供する。【解決手段】テトラアルコキシシランを加水分解反応及び縮合反応させるシリカ粒子の製造方法であって、加水分解反応及び縮合反応の反応開始から反応終了まで反応系内の水の濃度変化を３質量％以内とする、シリカ粒子の製造方法。前記シリカゾルの製造方法で得られたシリカゾルを含む研磨組成物を用いて研磨する、研磨方法。前記研磨方法を含む、半導体ウェハの製造方法。前記研磨方法を含む、半導体デバイスの製造方法。【選択図】なし