MANUFACTURING METHOD OF Ga2O3 THIN FILM

To provide a manufacturing method of a Ga2O3 thin film.SOLUTION: The invention provides a high-quality α-Ga2O3 thin film using a suitable Ga2O3 thin film growth mode. More particularly, this invention uses a growth mode that is obtained by plotting a ratio (mmol/mmol) of a HCl amount in the support...

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Bibliographische Detailangaben
Hauptverfasser:	THAI GIANG DANG, KAWARAMURA TOSHIYUKI, YASUOKA TATSUYA, LIU LI
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	To provide a manufacturing method of a Ga2O3 thin film.SOLUTION: The invention provides a high-quality α-Ga2O3 thin film using a suitable Ga2O3 thin film growth mode. More particularly, this invention uses a growth mode that is obtained by plotting a ratio (mmol/mmol) of a HCl amount in the support agent to an amount of GaCl3 in a raw material solution in an X-axis, and by plotting a number (TPR) that a film thickness of a Ga2O3 thin film is divided by a square root (RMS) of a surface roughness in a Y-axis.SELECTED DRAWING: Figure 3 【課題】本発明は、Ｇａ２Ｏ３薄膜の製造方法に関する。【解決手段】本発明は、最適なＧａ２Ｏ３薄膜の成長モードを用いて、高品質なα－Ｇａ２Ｏ３薄膜を得ることを特徴とする。より詳細には、本発明は、原料溶液中のＧａＣｌ３の量に対する、前記支援剤中のＨＣｌの量の比率（ｍｍｏｌ／ｍｍｏｌ）を横軸にプロットし、Ｇａ２Ｏ３薄膜の膜厚を表面粗さの２乗平方根（ＲＭＳ）で除したものの数値（ＴＰＲ）を縦軸にプロットすることにより得られた成長モードを用いることを特徴とする。【選択図】図３