CHALCOGEN COMPOUND AND SEMICONDUCTOR DEVICE INCLUDING THE SAME
To provide a chalcogen compound and a semiconductor device including the chalcogen compound.SOLUTION: Provided are a chalcogen compound having ovonic threshold switching characteristics, and a switching device, a semiconductor device, and/or a semiconductor apparatus which include the chalcogen comp...
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| creator | KOO BON WON KIM CHUNGMAN YU SEUNGGEUN KWON SEGAB RI SHOSHO YANG KIYEON PARK YONG YONG AN TOKO |
| description | To provide a chalcogen compound and a semiconductor device including the chalcogen compound.SOLUTION: Provided are a chalcogen compound having ovonic threshold switching characteristics, and a switching device, a semiconductor device, and/or a semiconductor apparatus which include the chalcogen compound. The chalcogen compound includes five or more elements and may implement stable switching characteristics with a low off-current value (leakage current value). The chalcogen compound includes selenium (Se) and tellurium (Te) and further includes: a first element including at least one of indium (In), aluminum (Al), strontium (Sr), and calcium (Ca); a second element including germanium (Ge) and/or tin (Sn); and a third element including at least one of arsenic (As), antimony (Sb), and bismuth (Bi).SELECTED DRAWING: Figure 3A
【課題】カルコゲン化合物、及びそれを含む半導体素子を提供する。【解決手段】オボニック閾値スイッチング特性を示すカルコゲン化合物、それを含むスチング素子、半導体素子、及び／または半導体装置に係り、該カルコゲン化合物は、５種以上の元素を含み、低いオフ電流値（漏れ電流値）を有しながらも、安定したスイッチング特性を具現することができ、該カルコゲン化合物は、セレニウム（Ｓｅ）及びテルル（Ｔｅ）を含み、インジウム（Ｉｎ）、アルミニウム（Ａｌ）、ストロンチウム（Ｓｒ）及びカルシウム（Ｃａ）のうち少なくとも一つを含む第１元素、ゲルマニウム（Ｇｅ）及び／またはスズ（Ｓｎ）のうち少なくとも一つを含む第２元素、及びヒ素（Ａｓ）、アンチモン（Ｓｂ）及びビスマス（Ｂｉ）のうち少なくとも一つを含む第３元素をさらに含む。【選択図】図３Ａ |
| format | Patent |
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【課題】カルコゲン化合物、及びそれを含む半導体素子を提供する。【解決手段】オボニック閾値スイッチング特性を示すカルコゲン化合物、それを含むスチング素子、半導体素子、及び／または半導体装置に係り、該カルコゲン化合物は、５種以上の元素を含み、低いオフ電流値（漏れ電流値）を有しながらも、安定したスイッチング特性を具現することができ、該カルコゲン化合物は、セレニウム（Ｓｅ）及びテルル（Ｔｅ）を含み、インジウム（Ｉｎ）、アルミニウム（Ａｌ）、ストロンチウム（Ｓｒ）及びカルシウム（Ｃａ）のうち少なくとも一つを含む第１元素、ゲルマニウム（Ｇｅ）及び／またはスズ（Ｓｎ）のうち少なくとも一つを含む第２元素、及びヒ素（Ａｓ）、アンチモン（Ｓｂ）及びビスマス（Ｂｉ）のうち少なくとも一つを含む第３元素をさらに含む。【選択図】図３Ａ</description><language>eng ; jpn</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220520&DB=EPODOC&CC=JP&NR=2022077020A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220520&DB=EPODOC&CC=JP&NR=2022077020A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KOO BON WON</creatorcontrib><creatorcontrib>KIM CHUNGMAN</creatorcontrib><creatorcontrib>YU SEUNGGEUN</creatorcontrib><creatorcontrib>KWON SEGAB</creatorcontrib><creatorcontrib>RI SHOSHO</creatorcontrib><creatorcontrib>YANG KIYEON</creatorcontrib><creatorcontrib>PARK YONG YONG</creatorcontrib><creatorcontrib>AN TOKO</creatorcontrib><title>CHALCOGEN COMPOUND AND SEMICONDUCTOR DEVICE INCLUDING THE SAME</title><description>To provide a chalcogen compound and a semiconductor device including the chalcogen compound.SOLUTION: Provided are a chalcogen compound having ovonic threshold switching characteristics, and a switching device, a semiconductor device, and/or a semiconductor apparatus which include the chalcogen compound. The chalcogen compound includes five or more elements and may implement stable switching characteristics with a low off-current value (leakage current value). The chalcogen compound includes selenium (Se) and tellurium (Te) and further includes: a first element including at least one of indium (In), aluminum (Al), strontium (Sr), and calcium (Ca); a second element including germanium (Ge) and/or tin (Sn); and a third element including at least one of arsenic (As), antimony (Sb), and bismuth (Bi).SELECTED DRAWING: Figure 3A
【課題】カルコゲン化合物、及びそれを含む半導体素子を提供する。【解決手段】オボニック閾値スイッチング特性を示すカルコゲン化合物、それを含むスチング素子、半導体素子、及び／または半導体装置に係り、該カルコゲン化合物は、５種以上の元素を含み、低いオフ電流値（漏れ電流値）を有しながらも、安定したスイッチング特性を具現することができ、該カルコゲン化合物は、セレニウム（Ｓｅ）及びテルル（Ｔｅ）を含み、インジウム（Ｉｎ）、アルミニウム（Ａｌ）、ストロンチウム（Ｓｒ）及びカルシウム（Ｃａ）のうち少なくとも一つを含む第１元素、ゲルマニウム（Ｇｅ）及び／またはスズ（Ｓｎ）のうち少なくとも一つを含む第２元素、及びヒ素（Ａｓ）、アンチモン（Ｓｂ）及びビスマス（Ｂｉ）のうち少なくとも一つを含む第３元素をさらに含む。【選択図】図３Ａ</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLBz9nD0cfZ3d_VTcPb3DfAP9XNRcATiYFdfT2d_P5dQ5xD_IAUX1zBPZ1cFTz9nn1AXTz93hRAPV4VgR19XHgbWtMSc4lReKM3NoOTmGuLsoZtakB-fWlyQmJyal1oS7xVgZGBkZGBubmBk4GhMlCIAmrAqVA</recordid><startdate>20220520</startdate><enddate>20220520</enddate><creator>KOO BON WON</creator><creator>KIM CHUNGMAN</creator><creator>YU SEUNGGEUN</creator><creator>KWON SEGAB</creator><creator>RI SHOSHO</creator><creator>YANG KIYEON</creator><creator>PARK YONG YONG</creator><creator>AN TOKO</creator><scope>EVB</scope></search><sort><creationdate>20220520</creationdate><title>CHALCOGEN COMPOUND AND SEMICONDUCTOR DEVICE INCLUDING THE SAME</title><author>KOO BON WON ; KIM CHUNGMAN ; YU SEUNGGEUN ; KWON SEGAB ; RI SHOSHO ; YANG KIYEON ; PARK YONG YONG ; AN TOKO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2022077020A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; jpn</language><creationdate>2022</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>KOO BON WON</creatorcontrib><creatorcontrib>KIM CHUNGMAN</creatorcontrib><creatorcontrib>YU SEUNGGEUN</creatorcontrib><creatorcontrib>KWON SEGAB</creatorcontrib><creatorcontrib>RI SHOSHO</creatorcontrib><creatorcontrib>YANG KIYEON</creatorcontrib><creatorcontrib>PARK YONG YONG</creatorcontrib><creatorcontrib>AN TOKO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KOO BON WON</au><au>KIM CHUNGMAN</au><au>YU SEUNGGEUN</au><au>KWON SEGAB</au><au>RI SHOSHO</au><au>YANG KIYEON</au><au>PARK YONG YONG</au><au>AN TOKO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>CHALCOGEN COMPOUND AND SEMICONDUCTOR DEVICE INCLUDING THE SAME</title><date>2022-05-20</date><risdate>2022</risdate><abstract>To provide a chalcogen compound and a semiconductor device including the chalcogen compound.SOLUTION: Provided are a chalcogen compound having ovonic threshold switching characteristics, and a switching device, a semiconductor device, and/or a semiconductor apparatus which include the chalcogen compound. The chalcogen compound includes five or more elements and may implement stable switching characteristics with a low off-current value (leakage current value). The chalcogen compound includes selenium (Se) and tellurium (Te) and further includes: a first element including at least one of indium (In), aluminum (Al), strontium (Sr), and calcium (Ca); a second element including germanium (Ge) and/or tin (Sn); and a third element including at least one of arsenic (As), antimony (Sb), and bismuth (Bi).SELECTED DRAWING: Figure 3A
【課題】カルコゲン化合物、及びそれを含む半導体素子を提供する。【解決手段】オボニック閾値スイッチング特性を示すカルコゲン化合物、それを含むスチング素子、半導体素子、及び／または半導体装置に係り、該カルコゲン化合物は、５種以上の元素を含み、低いオフ電流値（漏れ電流値）を有しながらも、安定したスイッチング特性を具現することができ、該カルコゲン化合物は、セレニウム（Ｓｅ）及びテルル（Ｔｅ）を含み、インジウム（Ｉｎ）、アルミニウム（Ａｌ）、ストロンチウム（Ｓｒ）及びカルシウム（Ｃａ）のうち少なくとも一つを含む第１元素、ゲルマニウム（Ｇｅ）及び／またはスズ（Ｓｎ）のうち少なくとも一つを含む第２元素、及びヒ素（Ａｓ）、アンチモン（Ｓｂ）及びビスマス（Ｂｉ）のうち少なくとも一つを含む第３元素をさらに含む。【選択図】図３Ａ</abstract><oa>free_for_read</oa></addata></record> |
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| title | CHALCOGEN COMPOUND AND SEMICONDUCTOR DEVICE INCLUDING THE SAME |
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