CHALCOGEN COMPOUND AND SEMICONDUCTOR DEVICE INCLUDING THE SAME

To provide a chalcogen compound and a semiconductor device including the chalcogen compound.SOLUTION: Provided are a chalcogen compound having ovonic threshold switching characteristics, and a switching device, a semiconductor device, and/or a semiconductor apparatus which include the chalcogen comp...

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Bibliographische Detailangaben
Hauptverfasser: KOO BON WON, KIM CHUNGMAN, YU SEUNGGEUN, KWON SEGAB, RI SHOSHO, YANG KIYEON, PARK YONG YONG, AN TOKO
Format: Patent
Sprache:eng ; jpn
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Zusammenfassung:To provide a chalcogen compound and a semiconductor device including the chalcogen compound.SOLUTION: Provided are a chalcogen compound having ovonic threshold switching characteristics, and a switching device, a semiconductor device, and/or a semiconductor apparatus which include the chalcogen compound. The chalcogen compound includes five or more elements and may implement stable switching characteristics with a low off-current value (leakage current value). The chalcogen compound includes selenium (Se) and tellurium (Te) and further includes: a first element including at least one of indium (In), aluminum (Al), strontium (Sr), and calcium (Ca); a second element including germanium (Ge) and/or tin (Sn); and a third element including at least one of arsenic (As), antimony (Sb), and bismuth (Bi).SELECTED DRAWING: Figure 3A 【課題】カルコゲン化合物、及びそれを含む半導体素子を提供する。【解決手段】オボニック閾値スイッチング特性を示すカルコゲン化合物、それを含むスチング素子、半導体素子、及び/または半導体装置に係り、該カルコゲン化合物は、5種以上の元素を含み、低いオフ電流値(漏れ電流値)を有しながらも、安定したスイッチング特性を具現することができ、該カルコゲン化合物は、セレニウム(Se)及びテルル(Te)を含み、インジウム(In)、アルミニウム(Al)、ストロンチウム(Sr)及びカルシウム(Ca)のうち少なくとも一つを含む第1元素、ゲルマニウム(Ge)及び/またはスズ(Sn)のうち少なくとも一つを含む第2元素、及びヒ素(As)、アンチモン(Sb)及びビスマス(Bi)のうち少なくとも一つを含む第3元素をさらに含む。【選択図】図3A