SUBSTRATE-LESS SILICONE ADSORPTION SHEET, WAFER PROCESSING LAMINATE USING SHEET, AND WAFER PROCESSING METHOD USING PROCESSING LAMINATE
To provide a substrate-less silicone adsorption sheet that temporarily bonds a member to be processed such as grinding, and can be easily peeled off, and effectively obtain a thin film wafer at the time of manufacturing a semiconductor chip.SOLUTION: In a base substrate-less silicone adsorption shee...
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Zusammenfassung: | To provide a substrate-less silicone adsorption sheet that temporarily bonds a member to be processed such as grinding, and can be easily peeled off, and effectively obtain a thin film wafer at the time of manufacturing a semiconductor chip.SOLUTION: In a base substrate-less silicone adsorption sheet composed of a first release film, a first silicone adsorption layer A, a second silicone adsorption layer B, and a second release film, the peeling force of each of the adsorption layers is 5 to 60 mN/25 mm for the first silicone adsorption layer A and 100 mN or more for the second silicone adsorption layer B for a glass substrate with a surface roughness Ra of 0.08 μm. In a wafer processing laminate, a temporary support and a bonding layer surface formed so as to cover the unevenness of a circuit-formed wafer surface are laminated with this substrate-less silicone adsorption sheet interposed therebetween.SELECTED DRAWING: Figure 1
【課題】研削等の加工を行う部材と仮支持体との仮接着、剥離が容易な基材レスシリコーン吸着シートの提供および半導体チップの製造時に薄膜ウェーハを効果的に得ることを可能にする。【解決手段】第1の離型フィルム/第1のシリコーン吸着層A/第2のシリコーン吸着層B/第2の離型フィルムの構成よりなる基材レスシリコーン吸着シートであり、各吸着層の剥離力は、表面粗さRaが0.08μmのガラス基板に対して、第1のシリコーン吸着層Aが5~60mN/25mm、第2のシリコーン吸着層Bが100mN以上である基材レスシリコーン吸着シート。この基材レスシリコーン吸着シートを介在させて、仮支持体と回路形成されたウェーハ表面の凹凸を覆うように形成した接合層面とを積層したウェーハ加工用積層体とする。【選択図】図1 |
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