POLISHING METHOD

To provide, in one aspect, a polishing method for a silicon substrate which can increase the polishing speed.SOLUTION: In one aspect, a polishing method comprises polishing a to-be-polished silicon substrate using a polishing liquid composition containing silica particles (component A) and an amino group-containing water-soluble polymer (component B), where the polishing is performed under conditions that the zeta potential of the component A should be equal to or greater than 0 mV, the zeta potential of the to-be-polished silicon substrate should be positive, and the sum of the absolute values of the zeta potentials of the component A and the to-be-polished silicon substrate should be 28 mV or less.SELECTED DRAWING: None 【課題】一態様において、研磨速度を向上できるシリコン基板の研磨方法を提供する。【解決手段】本開示は、一態様において、シリカ粒子（成分Ａ）及びアミノ基含有水溶性高分子（成分Ｂ）を含有する研磨液組成物を用いて被研磨シリコン基板を研磨する工程を含み、前記研磨は、成分Ａのゼータ電位が０ｍＶ以上、被研磨シリコン基板のゼータ電位がプラス、成分Ａ及び被研磨シリコン基板のゼータ電位の絶対値の合計が２８ｍＶ以下の条件で行う、研磨方法に関する。【選択図】なし