SEMICONDUCTOR DEVICE, MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE, AND POWER CONVERSION DEVICE

To provide a semiconductor device that can be reduced in size, and a manufacturing method for a semiconductor device.SOLUTION: An inner lead 3e having die pads 3a and 3b having semiconductor elements 1a and 1b on upper surfaces has a stepped shape. A surface of a part of the inner lead 3e is exposed...

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description To provide a semiconductor device that can be reduced in size, and a manufacturing method for a semiconductor device.SOLUTION: An inner lead 3e having die pads 3a and 3b having semiconductor elements 1a and 1b on upper surfaces has a stepped shape. A surface of a part of the inner lead 3e is exposed from sealing resin 5 in a plan view. An outer lead 3f connected to and continuing to the inner lead 3e has a first bending part 3g on a side surface of the sealing resin 5 so as to extend to a direction of the upper surface of the die pad 3a. Thus, a semiconductor device with the reduced size can be obtained.SELECTED DRAWING: Figure 2 【課題】小型化可能な半導体装置及び半導体装置の製造方法を提供する。【解決手段】半導体素子1a、1bを上面に搭載するダイパッド3a、3bを有するインナーリード3eは、段差形状を有し、平面視にてインナーリード3eの一部の面が、封止樹脂5から露出している。インナーリード3eと繋がって連結されたアウターリード3fは、ダイパッド3aの上面の方向に延在するように、封止樹脂5の側面に第1の屈曲部3gを有することにより、小型化された半導体装置を得ることができる。【選択図】図2
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A surface of a part of the inner lead 3e is exposed from sealing resin 5 in a plan view. An outer lead 3f connected to and continuing to the inner lead 3e has a first bending part 3g on a side surface of the sealing resin 5 so as to extend to a direction of the upper surface of the die pad 3a. Thus, a semiconductor device with the reduced size can be obtained.SELECTED DRAWING: Figure 2 【課題】小型化可能な半導体装置及び半導体装置の製造方法を提供する。【解決手段】半導体素子1a、1bを上面に搭載するダイパッド3a、3bを有するインナーリード3eは、段差形状を有し、平面視にてインナーリード3eの一部の面が、封止樹脂5から露出している。インナーリード3eと繋がって連結されたアウターリード3fは、ダイパッド3aの上面の方向に延在するように、封止樹脂5の側面に第1の屈曲部3gを有することにより、小型化された半導体装置を得ることができる。【選択図】図2</description><language>eng ; jpn</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20220413&amp;DB=EPODOC&amp;CC=JP&amp;NR=2022059117A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20220413&amp;DB=EPODOC&amp;CC=JP&amp;NR=2022059117A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>ICHIKAWA KEITARO</creatorcontrib><title>SEMICONDUCTOR DEVICE, MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE, AND POWER CONVERSION DEVICE</title><description>To provide a semiconductor device that can be reduced in size, and a manufacturing method for a semiconductor device.SOLUTION: An inner lead 3e having die pads 3a and 3b having semiconductor elements 1a and 1b on upper surfaces has a stepped shape. 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ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title SEMICONDUCTOR DEVICE, MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE, AND POWER CONVERSION DEVICE
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