SiC SINGLE CRYSTAL GROWTH APPARATUS

To provide a SiC single crystal growth apparatus capable of sublimating a solid raw material by uniformly heating to produce a gas raw material and reducing a waste of a raw material in growing the SiC single crystal.SOLUTION: A SiC single crystal growth apparatus 1 includes: a raw material accommodating part 12 for accommodating a solid raw material M(s) composed of SiC in a part of an internal space S partitioned by a cylindrical side peripheral part 14; a heating container 10 having a seed crystal attaching part 16 in which a SiC seed crystal 2 is arranged in an internal space S side where the solid raw material (S) is not accommodated in the raw material accommodating part 12; and heating means 3 for heating the heating container 10. The heating means 3 has a first heating part 31 having a first heating surface 31a that is arranged facing a main surface part of the raw material accommodating part 12 in a position relation where a whole outer surface of the main surface part is covered, the main surface part being an outer surface side of the heating container 10 and facing the seed crystal attaching part 16. When a cross sectional area of the internal space S is A and an area of the first heating surface 31a is B, a relationship of B/A≥2 is satisfied.SELECTED DRAWING: Figure 1 【課題】固体原料を均一に加熱して気体原料に昇華させることができ、かつＳｉＣ単結晶を成長させる際の原料の無駄を低減することが可能なＳｉＣ単結晶成長装置を提供する。【解決手段】ＳｉＣ単結晶成長装置１は、筒状の側周部分１４で区画形成された内部空間Ｓの一部分に、ＳｉＣからなる固体原料Ｍ（ｓ）が収容される原料収容部１２、および、原料収容部１２の、固体原料Ｍ（ｓ）が収容されていない内部空間Ｓの側に、ＳｉＣの種結晶２が配置される種結晶取付部１６を有する加熱容器１０と、加熱容器１０を加熱する加熱手段３とを備え、加熱手段３が、加熱容器１０の外面側であってかつ種結晶取付部１６と対向する原料収容部１２の主面部分に対し、該主面部分の外面全体を覆う位置関係で対向配置される第１加熱面３１ａを有する第１加熱部３１を有し、内部空間Ｓの輪切り面積をＡ、第１加熱面３１ａの面積をＢとしたとき、Ｂ／Ａ≧２の関係を満たす。【選択図】図１