METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, PROGRAM, SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD

To form a film with flatness.SOLUTION: A method comprises the steps of: (a) carrying a substrate into a processing chamber; (b) supplying a gas containing a first element to the substrate; (c) supplying a first reducing gas to the substrate multiple times; (d) performing (b) and (c) in sequence one...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	OGAWA ARITO, MIZUNO KANEKAZU, HAYASAKA SHOGO, KURIBAYASHI YUKINAGA, SADATA TAKUYA
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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