METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, PROGRAM, SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD

To form a film with flatness.SOLUTION: A method comprises the steps of: (a) carrying a substrate into a processing chamber; (b) supplying a gas containing a first element to the substrate; (c) supplying a first reducing gas to the substrate multiple times; (d) performing (b) and (c) in sequence one...

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Bibliographische Detailangaben
Hauptverfasser:	OGAWA ARITO, MIZUNO KANEKAZU, HAYASAKA SHOGO, KURIBAYASHI YUKINAGA, SADATA TAKUYA
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	To form a film with flatness.SOLUTION: A method comprises the steps of: (a) carrying a substrate into a processing chamber; (b) supplying a gas containing a first element to the substrate; (c) supplying a first reducing gas to the substrate multiple times; (d) performing (b) and (c) in sequence one or more times to form a first layer on the substrate; and (e) after (d) and (f) supplying a gas containing a second element to the substrate, (g) supplying a second reducing gas to the substrate, and (h) performing (f) and (g) in order one or more times to form a second layer on the first layer.SELECTED DRAWING: Figure 4 【課題】平坦性を有する膜を形成することができる。【解決手段】（ａ）基板を処理室に搬入する工程と、（ｂ）基板に対して第１元素含有ガスを供給する工程と、（ｃ）基板に対して第１の還元ガスを複数回供給する工程と、（ｄ）（ｂ）及び（ｃ）を順に１回以上実行し、基板に対して第１の層を形成する工程と、（ｅ）（ｄ）の後であって、（ｆ）基板に対して第２元素含有ガスを供給する工程と、（ｇ）基板に対して第２の還元ガスを供給する工程と、（ｈ）（ｆ）及び（ｇ）を順に１回以上実行し、第１の層の上に第２の層を形成する工程と、を行う工程と、を有する。【選択図】図４