SEMICONDUCTOR STORAGE DEVICE

To provide a highly reliable semiconductor storage device.SOLUTION: A semiconductor storage device includes a first area including a memory cell array and a second area including a peripheral circuit. The second area includes a semiconductor substrate. The semiconductor substrate includes a first surface, a second surface, a semiconductor region between the first and second surfaces, an n-type semiconductor region provided on the first surface and having higher donor concentration than the semiconductor region, a crushed region provided on the second surface, and a p-type semiconductor region provided between the crushed region and the n-type semiconductor region, which is closer to the second surface than the n-type semiconductor region in the thickness direction of the semiconductor substrate and has higher acceptor concentration than the semiconductor region.SELECTED DRAWING: Figure 1 【課題】高い信頼性を有する半導体記憶装置を提供する。【解決手段】半導体記憶装置は、メモリセルアレイを含む第１の領域と、周辺回路を含む第２の領域と、を具備する。第２の領域は、半導体基板を備える。半導体基板は、第１の表面と、第２の表面と、第１および第２の表面の間の半導体領域と、第１の表面に設けられ、ドナー濃度が半導体領域よりも高いｎ型半導体領域と、第２の表面に設けられる破砕領域と、破砕領域とｎ型半導体領域との間に設けられ、半導体基板の厚さ方向においてｎ型半導体領域よりも第２の表面に近く、アクセプタ濃度が半導体領域よりも高いｐ型半導体領域と、を含む。【選択図】図１