INSPECTION DEVICE FOR SEMICONDUCTOR DEVICE AND INSPECTION METHOD FOR SEMICONDUCTOR DEVICE

To provide an inspection device for a semiconductor device and an inspection method for a semiconductor device, by which the stress on a semiconductor substrate where a semiconductor device is formed can be inspected without destruction and with high resolution.SOLUTION: An inspection device 1 includes: an X-ray irradiation unit 11 that makes a monochromatic X-ray incident to a semiconductor device, which is a subject 40, obliquely at a predetermined incidence angle; a detection unit 14 that detects the reflection X-ray generated from the subject 40 with a plurality of photodetection elements disposed two-dimensionally; an analysis device 20 that generates an X-ray diffraction image obtained by photoelectric conversion of the reflection X-ray; and a control unit 15 that changes the incidence angle and the detection angle of the X-ray. The analysis device 20 acquires the X-ray diffraction image every time the incidence angle is changed, extracts a peak X-ray diffraction image at which the X-ray intensity is the maximum for each pixel, and estimates the stress distribution of the subject 40 by comparing the peak X-ray diffraction image between the pixels.SELECTED DRAWING: Figure 1 【課題】半導体装置が形成された半導体基板における応力を、非破壊かつ高分解能で検査することができる、半導体装置の検査装置、及び、半導体装置の検査方法を提供する。【解決手段】被検体４０である半導体装置に、単色Ｘ線を所定の入射角度で斜入射させるＸ線照射部１１と、被検体４０から発生する反射Ｘ線を２次元に配置された複数の光検出素子により検出する検出部１４と、反射Ｘ線を光電変換して得られるＸ線回折像を生成する解析装置２０と、Ｘ線の入射角度と検出角度を変更する制御部１５と、を備えた検査装置１において、解析装置２０は、入射角度が変更される都度Ｘ線回折像を取得し、画素ごとにＸ線強度が最大となるピークＸ線回折像を抽出し、ピークＸ線回折像を画素間で比較することにより、被検体４０の応力分布を推定する。【選択図】図１