METHOD OF CLEANING POLYCRYSTALLINE SILICON, METHOD OF PRODUCING CLEANED POLYCRYSTALLINE SILICON, AND APPARATUS FOR CLEANING POLYCRYSTALLINE SILICON

To realize a method for cleaning polycrystalline silicon, etc. that can reduce the occurrence of watermarks.SOLUTION: A method for cleaning polycrystalline silicon comprises: a cleaning step (S1) for cleaning polycrystalline silicon; a hot air-drying step (S2) for blowing hot air of 100°C or higher...

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Hauptverfasser:	YOKOSE TAKUYA, SAKAI JUNYA
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BLASTING CHEMISTRY COMPOUNDS THEREOF CRYSTAL GROWTH DRYING DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM HEATING INORGANIC CHEMISTRY LIGHTING MECHANICAL ENGINEERING METALLURGY NON-METALLIC ELEMENTS PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL WEAPONS
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Beschreibung
Zusammenfassung:	To realize a method for cleaning polycrystalline silicon, etc. that can reduce the occurrence of watermarks.SOLUTION: A method for cleaning polycrystalline silicon comprises: a cleaning step (S1) for cleaning polycrystalline silicon; a hot air-drying step (S2) for blowing hot air of 100°C or higher and 180°C or lower at a gas linear velocity of 1 m/s or higher onto the polycrystalline silicon; and a cold air-drying step (S3) for blowing cold air of 0°C or higher and 40°C or lower at a gas linear velocity of 1 m/s or higher.SELECTED DRAWING: Figure 1 【課題】ウォーターマークの発生を低減できる多結晶シリコンの清浄化方法等を実現する。【解決手段】多結晶シリコンの清浄化方法は、多結晶シリコンを洗浄する洗浄工程（Ｓ１）と、多結晶シリコンに対して、１００℃以上１８０℃以下の熱風をガス線速１ｍ／ｓ以上で吹き付ける熱風乾燥工程（Ｓ２）と、０℃以上４０℃以下の冷風をガス線速１ｍ／ｓ以上で吹き付ける冷風乾燥工程（Ｓ３）と、を含む。【選択図】図１