MEMORY DEVICE AND MANUFACTURING METHOD FOR THE SAME

To provide a laminate of nonvolatile memory devices with high integration density.SOLUTION: A 3D memory device 10 includes a substrate 110, a word line layer 120, an insulating layer 130, and a memory cell 200. The word line layer is stacked on the substrate. The insulating layer and the word line l...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	SUN HUNGANG, YANG TSUCHING, LAI SHENGIH, CHIANG KUOANG
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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