PHOTORESIST COMPOSITIONS AND PATTERN FORMATION METHODS

To provide photoresist compositions and pattern formation methods.SOLUTION: A photoresist composition comprises a first polymer formed by free radical polymerization, the first polymer comprising a polymerization unit formed from a monomer comprising an ethylenically unsaturated double bond and an a...

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Hauptverfasser:	JASON A DESISTO, THOMAS MARANGONI, LI MINGQI, LIU CONG, THOMAS CARDOLACCIA, LEE CHOONG-BONG, WU CHUNYI, GREGORY P PROKOPOWICZ
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR CHEMISTRY CINEMATOGRAPHY COMPOSITIONS BASED THEREON ELECTROGRAPHY HOLOGRAPHY MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVINGCARBON-TO-CARBON UNSATURATED BONDS MATERIALS THEREFOR METALLURGY ORGANIC MACROMOLECULAR COMPOUNDS ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS THEIR PREPARATION OR CHEMICAL WORKING-UP
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Beschreibung
Zusammenfassung:	To provide photoresist compositions and pattern formation methods.SOLUTION: A photoresist composition comprises a first polymer formed by free radical polymerization, the first polymer comprising a polymerization unit formed from a monomer comprising an ethylenically unsaturated double bond and an acid-labile group; a photoacid generator; a quencher being a carboxylic acid amide compound having a specific structure; and a solvent.SELECTED DRAWING: None 【課題】フォトレジスト組成物及びパターン形成方法を提供する。【解決手段】エチレン性不飽和二重結合と、酸に不安定な基とを含むモノマーから形成された重合単位を含む、フリーラジカル重合によって形成された第１のポリマーと、光酸発生剤と、特定構造を有するカルボン酸アミド化合物を消光剤と、溶剤を含有することを特徴とするフォトレジスト組成物。【選択図】なし