METHOD AND DEVICE FOR EVALUATING JOINT LAYER

To solve an issue that there is no quantitatively evaluating a joint layer.SOLUTION: In an SiC substrate 106, a thin film heater 117a, b made of Ni-P is formed between a terminal electrode 115a and a terminal electrode 115b, a temperature probe 116 made of Ni-P is formed between a terminal electrode 114a and a terminal electrode 114b, and a current application route is formed between a terminal electrode 124a and a terminal electrode 124b. The SiC substrate 106 and a copper plate 104 are connected with a sinter Ag paste 125. In the terminal electrodes, a constant current 128d is supplied from a TM direct current power source device to the thin film heater 117. The current application route receives the constant current 128a from an EM direct current power source device 803c.SELECTED DRAWING: Figure 36 【課題】接合層を定量的に評価できないという課題があった。【解決手段】ＳｉＣ基板１０６に、端子電極１１５ａ、端子電極１１５ｂ間にＮｉ－Ｐからなる薄膜ヒータ１１７ａ，ｂ、端子電極１１４ａ、端子電極１１４ｂ間にＮｉ－Ｐからなる温度プローブ１１６、端子電極１２４ａ、端子電極１２４ｂ間に電流印加経路が形成される。ＳｉＣ基板１０６と銅プレート１０４とは焼結Ａｇペースト１２５で接続されている。端子電極には、ＴＭ用直流電源装置から定電流１２８ｄが、薄膜ヒータ１１７に供給される。電流印加経路には、ＥＭ用直流電源装置８０３ｃから定電流１２８ａが供給される。【選択図】図３６