JIG FOR VAPOR PHASE GROWTH, AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATE USING THE SAME

To provide a jig for manufacturing a nitride semiconductor substrate by vapor phase growth.SOLUTION: The present invention provides a jig for vapor phase growth, the jig including a susceptor having one main surface where a substrate for vapor phase growth is mounted, and a guide mounted on the one...

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Bibliographische Detailangaben
Hauptverfasser:	ERIGUCHI KENICHI, KOMIYAMA JUN, ABE YOSHIHISA
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CRYSTAL GROWTH DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	To provide a jig for manufacturing a nitride semiconductor substrate by vapor phase growth.SOLUTION: The present invention provides a jig for vapor phase growth, the jig including a susceptor having one main surface where a substrate for vapor phase growth is mounted, and a guide mounted on the one main surface. On the one main surface, one protrusion is formed in the center of the one main surface and a plurality of protrusions are formed to surround the one protrusion, the one protrusion and the plurality of protrusions each having approximately the same diameter as the substrate. The guide has openings where the protrusions are inserted, respectively. The thickness of the guide is greater than the sum of the height of each protrusion and the thickness of the substrate.SELECTED DRAWING: Figure 2 【課題】気相成長による窒化物半導体基板製造用の治具を提供する。【解決手段】本発明は、気相成長用の基板を載置する一主面を有するサセプタと、前記一主面上に載置されるガイドからなる気相成長用治具であって、前記一主面上には、前記基板と略同径の突起部が前記一主面の中心にひとつ及びこれを囲むように複数形成されており、前記ガイドは、前記突起部が挿入される開口部を有しており、前記突起部の高さと前記基板の厚さとの和より前記ガイドの厚さのほうが大きいことを特徴とする。【選択図】図２