PLASMA PROCESSING APPARATUS

To provide a plasma processing apparatus which has a high non-defective yield by improving the processing uniformity around the outer periphery of a substrate to be processed.SOLUTION: A plasma processing apparatus comprises: a processing chamber in which a sample is plasma-processed; a high-frequency power source which supplies high-frequency microwave power for generating plasma; a magnetic field formation mechanism which forms a magnetic field in the processing chamber; a sample table on which the sample is placed; and a first gas supply plate which supplies first gas into the processing chamber and is disposed above the processing chamber. The plasma processing apparatus further comprises a second gas supply plate which supplies second gas into the processing chamber and is disposed below the first gas supply plate. The first gas supply plate has a plurality of holes formed at the center. The second gas supply plate has a circular opening at the center. The area of the opening is larger than that of a region where the holes are located.SELECTED DRAWING: Figure 1 【課題】被処理基板の外周部付近での処理の均一性を向上させて、良品歩留まりが高いプラズマ処理装置を提供する。【解決手段】試料がプラズマ処理される処理室と、プラズマを生成するためのマイクロ波の高周波電力を供給する高周波電源と、処理室内に磁場を形成する磁場形成機構と、試料が載置される試料台と、処理室内へ第一のガスを供給し処理室の上部に配置された第一のガス供給板とを備えるプラズマ処理装置において、処理室内へ第二のガスを供給し第一のガス供給板の下方に配置された第二のガス供給板をさらに備え、第一のガス供給板は、複数の孔が中心部に形成され、第二のガス供給板は、円状の開口部を中心部に有し、開口部の面積は、孔が配置された領域の面積よりも広く形成した。【選択図】図１