THERMOELECTRIC CONVERSION ELEMENT AND MANUFACTURING METHOD THEREOF

To provide a thermoelectric conversion element which is a carbon-based thin film in which a pair of thermocouple members are PN-junctioned.SOLUTION: A thermoelectric conversion element 10 includes a base material 1 and at least a pair of thermocouple members 5 provided on the base material 1. One of...

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Hauptverfasser: KIRIHARA KAZUHIRO, ISHIHARA MASANORI, HASEGAWA MASATAKA, EI KEISEKI, OKIKAWA YUKI, MUKODA MASAKAZU
Format: Patent
Sprache:eng ; jpn
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Zusammenfassung:To provide a thermoelectric conversion element which is a carbon-based thin film in which a pair of thermocouple members are PN-junctioned.SOLUTION: A thermoelectric conversion element 10 includes a base material 1 and at least a pair of thermocouple members 5 provided on the base material 1. One of the pair of thermocouple members 5 is an N-type doped carbon-based thin film 3, and the other of the pair of thermocouple members is a P-type carbon-based thin film 2. Each of the carbon-based thin films 2 and 3 is preferably one of a single-layer graphene with an average number of layers of 0.8 or more and 1.2 or less, a two-layer graphene with an average number of layers of 1.8 or more and 2.2 or less, and a graphene in which a region of a single-layer graphene is partially mixed in the two-layer graphene with the average number of layers of 0.8 or more and 2.2 or less.SELECTED DRAWING: Figure 1 【課題】一対の熱電対部材がPN接合された炭素系薄膜である熱電変換素子を提供する。【解決手段】熱電変換素子10は、基材1と、基材1上に設けられた少なくとも一対の熱電対部材5を備えている。一対の熱電対部材5の一方がN型ドープされた炭素系薄膜3で、一対の熱電対部材の他方がP型の炭素系薄膜2である。炭素系薄膜2,3は、層数の平均値が0.8以上1.2以下である単層グラフェン、層数の平均値が1.8以上2.2以下である2層グラフェン、および層数の平均値が0.8以上2.2以下である2層グラフェン中に部分的に単層グラフェンの領域が混在するグラフェンのいずれかであることが好ましい。【選択図】図1