METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE

To provide a method for manufacturing a SiC single crystal substrate, capable of suppressing the occurrence of a warp.SOLUTION: A method for epitaxially growing a SiC single crystal film 20 on the surface of a SiC single crystal film deposition substrate 10 including a dopant by a chemical vapor deposition method to manufacture a SiC single crystal substrate 200 comprises: a first film formation step of supplying a mixed gas including a raw material gas and a dopant gas to a film deposition chamber arranging the single crystal film deposition substrate 10 and controlling the supply rate of the mixed gas to grow a first SiC single crystal film 21 having a dopant concentration lower than that of the substrate 10 on the surface of the single crystal film deposition substrate 10; and a second film formation step of supplying the mixed gas including a raw material gas and a dopant gas to the film deposition chamber and controlling the supply rate of the mixed gas to grow a second SiC single crystal film 22 having a dopant concentration higher than that of the substrate 10 on the first SiC single crystal film 21.SELECTED DRAWING: Figure 2 【課題】反りの発生を抑制できるＳｉＣ単結晶基板の製造方法を提供する。【解決手段】ドーパントを有するＳｉＣ単結晶成膜用基板10表面に化学的気相成長法によりＳｉＣ単結晶膜20をエピタキシャル成長させてＳｉＣ単結晶基板200を製造する方法において、上記単結晶成膜用基板10が配置された成膜室内に原料ガスとドーパントガスを含む混合ガスを供給し、その供給比率を調整して単結晶成膜用基板10の表面に該基板10よりドーパント濃度が低い第一ＳｉＣ単結晶膜21を成長させる第一成膜工程と、成膜室内に原料ガスとドーパントガスを含む混合ガスを供給し、その供給比率を調整して第一ＳｉＣ単結晶膜21表面に上記単結晶成膜用基板10よりドーパント濃度が高い第二ＳｉＣ単結晶膜22を成長させる第二成膜工程を有することを特徴とする。【選択図】図２