SEMICONDUCTOR DEVICE

To provide a semiconductor device in which a property can be improved.SOLUTION: According to an embodiment, a semiconductor device comprises: a silicon carbide member; a first electrode; a second electrode; a third electrode; and a first insulating member. The silicon carbide member comprises: a first silicon carbide region; a second silicon carbide region; and a third silicon carbide region. A first insulating region of the first insulating member includes a first surface facing the second silicon carbide region and the third silicon carbide region. The first surface is inclined with respect to a (0001) surface of the silicon carbide member.SELECTED DRAWING: Figure 1 【課題】特性の向上が可能な半導体装置を提供する。【解決手段】実施形態によれば、半導体装置は、炭化珪素部材、第１電極、第２電極、第３電極及び第１絶縁部材を含む。炭化珪素部材は、第１炭化珪素領域、第２炭化珪素領域及び第３炭化珪素領域を含む。第１絶縁部材の第１絶縁領域は、第２炭化珪素領域及び第３炭化珪素領域と対向する第１面を含む。第１面は、炭化珪素部材の（０００１）面に対して傾斜する。【選択図】図１