COMPOSITE STRUCTURE AND SEMICONDUCTOR MANUFACTURING EQUIPMENT WITH COMPOSITE STRUCTURE

COMPOSITE STRUCTURE AND SEMICONDUCTOR MANUFACTURING EQUIPMENT WITH COMPOSITE STRUCTURE

To provide a component for a semiconductor manufacturing equipment and a semiconductor manufacturing equipment, which can increase low-particle generation.SOLUTION: A composite structure includes a base material and a structure provided on the base material and having a surface exposed to a plasma a...

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Bibliographische Detailangaben
Hauptverfasser: ASHIZAWA HIROAKI, TAKIZAWA AKIHITO
Format: Patent
Sprache:eng ; jpn
Schlagworte:
BASIC ELECTRIC ELEMENTS
CHEMICAL SURFACE TREATMENT
CHEMISTRY
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
DIFFUSION TREATMENT OF METALLIC MATERIAL
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
METALLURGY
SEMICONDUCTOR DEVICES
SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:To provide a component for a semiconductor manufacturing equipment and a semiconductor manufacturing equipment, which can increase low-particle generation.SOLUTION: A composite structure includes a base material and a structure provided on the base material and having a surface exposed to a plasma atmosphere. The structure contains yttrium and aluminum oxides as its main components, and a lattice constant a greater than 12.080 Å, as calculated by the following equation 1: a=d(h2+k2+l2)1/2... (Equation 1) (where d is the lattice plane spacing and (hkl) is the mirror index), and the composite structure has excellent low-particle generation and is preferably used as a component for semiconductor manufacturing equipment.SELECTED DRAWING: Figure 5 【課題】耐パーティクル性(low-particle generation)を高めることができる半導体製造装置用部材および半導体製造装置を提供することを目的とする。【解決手段】基材と、前記基材上に設けられ、プラズマ雰囲気に曝露される表面を有する構造物と、を備え、前記構造物は、イットリウムおよびアルミニウムの酸化物を主成分として含み、下記式（１）：ａ＝ｄ・（ｈ２＋ｋ２＋ｌ２）１／２・・・（式１）（式１において、ｄは格子面間隔、（ｈｋｌ）はミラー指数である）で算出される格子定数ａが１２．０８０Åより大である複合構造物は、耐パーティクル性に優れ、半導体製造装置用部材として好ましく用いられる。【選択図】図５