COMPOSITE STRUCTURE AND SEMICONDUCTOR MANUFACTURING EQUIPMENT WITH COMPOSITE STRUCTURE

To provide a composite structure used as a component for semiconductor manufacturing equipment and the semiconductor manufacturing equipment having the composite structure, which can increase low-particle generation.SOLUTION: A composite structure includes a base material and a structure provided on...

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Hauptverfasser:	ASHIZAWA HIROAKI, TAKIZAWA AKIHITO
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	To provide a composite structure used as a component for semiconductor manufacturing equipment and the semiconductor manufacturing equipment having the composite structure, which can increase low-particle generation.SOLUTION: A composite structure includes a base material and a structure provided on the base material and having a surface. The structure contains Y3Al5O12 as a main component and its indentation hardness is greater than 8.5 GPa. The structure has excellent low-particle generation and is preferably used as a component for semiconductor manufacturing equipment.SELECTED DRAWING: Figure 5 【課題】耐パーティクル性(low-particle generation)を高めることができる、半導体製造装置用部材として用いられる複合構造物およびそれを備えた半導体製造装置を提供することを目的とする。【解決手段】基材と、前記基材上に設けられ、表面を有する構造物とを含む複合構造物であって、前記構造物がＹ３Ａｌ５Ｏ１２を主成分として含み、かつそのインデンテーション硬度が８．５ＧＰａより大である複合構造物は、耐パーティクル性に優れ、半導体製造装置用部材として好ましく用いられる。【選択図】図５