HIGH ELECTRON MOBILITY TRANSISTOR AND MANUFACTURING METHOD FOR THE SAME
To provide a high electron mobility transistor and a manufacturing method for the same.SOLUTION: A high electron mobility transistor includes a gate electrode provided on a depletion forming layer. The gate electrode includes a first gate electrode provided so as to form ohmic contact with the deple...
Gespeichert in:
| Hauptverfasser: | , |
|---|---|
| Format: | Patent |
| Sprache: | eng ; jpn |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Zusammenfassung: | To provide a high electron mobility transistor and a manufacturing method for the same.SOLUTION: A high electron mobility transistor includes a gate electrode provided on a depletion forming layer. The gate electrode includes a first gate electrode provided so as to form ohmic contact with the depletion forming layer, and a second gate electrode provided so as to form Schottky contact with the depletion forming layer.SELECTED DRAWING: Figure 1
【課題】高電子移動度トランジスタ及びその製造方法を提供する。【解決手段】空乏形成層上に設けられるゲート電極を含み、ゲート電極は、空乏形成層とオーミックコンタクトを形成するように設けられる第１ゲート電極と、空乏形成層とショットキーコンタクトを形成するように設けられる第２ゲート電極と、を含む高電子移動度トランジスタである。【選択図】図１ |
|---|