SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD, METHOD FOR GENERATING DATA FOR LEARNING, LEARNING METHOD, LEARNING DEVICE, METHOD FOR CREATING LEARNED MODEL, AND LEARNED MODEL

To appropriately remove a resist layer having a hardened layer of a substrate to be processed.SOLUTION: A substrate processing apparatus (100) comprises a substrate holding unit (120), a chemical liquid supply unit (130), a substrate information acquisition unit (22a), a chemical liquid processing c...

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Hauptverfasser: ANO SEIJI, KOJIMARU TOMONORI
Format: Patent
Sprache:eng ; jpn
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Zusammenfassung:To appropriately remove a resist layer having a hardened layer of a substrate to be processed.SOLUTION: A substrate processing apparatus (100) comprises a substrate holding unit (120), a chemical liquid supply unit (130), a substrate information acquisition unit (22a), a chemical liquid processing condition information acquisition unit (22b), and a control unit (22). The substrate information acquisition unit (22a) acquires substrate information including hardened layer thickness information indicating the thickness of a hardened layer in a resist layer of a substrate to be processed or ion implantation condition information indicating a condition for ion implantation by which the hardened layer is formed on the resist layer. The chemical fluid processing condition information acquisition unit (22b) acquires, based on the substrate information, chemical fluid processing condition information indicating a chemical fluid processing condition for the substrate to be processed from a learned model. The control unit (22) controls the substrate holding unit (120) and the chemical fluid supply unit (130) to process the substrate to be processed with a chemical fluid based on the chemical fluid processing condition information.SELECTED DRAWING: Figure 4 【課題】処理対象基板の硬化層を有するレジスト層を適切に除去する。【解決手段】基板処理装置(100)は、基板保持部(120)と、薬液供給部(130)と、基板情報取得部(22a)と、薬液処理条件情報取得部(22b)と、制御部(22)とを備える。基板情報取得部(22a)は、処理対象基板のレジスト層における硬化層の厚さを示す硬化層厚さ情報またはレジスト層に硬化層を形成したイオン注入の条件を示すイオン注入条件情報を含む基板情報を取得する。薬液処理条件情報取得部(22b)は、基板情報に基づいて、学習済モデルから処理対象基板についての薬液処理条件を示す薬液処理条件情報を取得する。制御部(22)は、薬液処理条件情報に基づいて、処理対象基板を薬液で処理するように基板保持部(120)および薬液供給部(130)を制御する。【選択図】図4