SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
To provide a technology capable of suppressing insulation failure caused by an air bubble inherent in an adhesive reaching a circuit pattern in a semiconductor device.SOLUTION: A semiconductor device 100 includes a resin insulated copper base plate 1 having a copper base plate 1a, an insulation laye...
Gespeichert in:
1. Verfasser: | |
---|---|
Format: | Patent |
Sprache: | eng ; jpn |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | To provide a technology capable of suppressing insulation failure caused by an air bubble inherent in an adhesive reaching a circuit pattern in a semiconductor device.SOLUTION: A semiconductor device 100 includes a resin insulated copper base plate 1 having a copper base plate 1a, an insulation layer 1b formed on an upper surface of the copper base plate 1a, and a circuit pattern 1c formed on an upper surface of the insulation layer 1b, a semiconductor element 2 mounted on an upper surface of the resin insulated copper base plate 1, a case 4 joined to an outer periphery of the resin insulated copper base plate 1 via an adhesive 9, a sealing material 8 for sealing the upper surface of the resin insulated copper base plate 1 and the semiconductor element 2 in the case 4, and a roughened pattern 11 formed so as to surround the circuit pattern 1c on the upper surface of the insulation layer 1b in a plan view.SELECTED DRAWING: Figure 1
【課題】半導体装置において、接着剤に内在する気泡が回路パターンに到着することで生じる絶縁不良を抑制可能な技術を提供することを目的とする。【解決手段】半導体装置100は、銅ベース板1aと、銅ベース板1aの上面に設けられた絶縁層1bと、絶縁層1bの上面に設けられた回路パターン1cとを有する樹脂絶縁銅ベース板1と、樹脂絶縁銅ベース板1の上面に搭載された半導体素子2と、接着剤9を介して樹脂絶縁銅ベース板1の外周部に接合されたケース4と、ケース4の内部において樹脂絶縁銅ベース板1の上面および半導体素子2を封止する封止材8と、絶縁層1bの上面に回路パターン1cを平面視で囲むように形成された粗化パターン11とを備えている。【選択図】図1 |
---|