PN JUNCTION DIODE
To provide a pn junction diode in which a p-type NiO semiconductor and an n-type Ga2O3 semiconductor are directly joined to each other and that can suppress reduction in resistivity.SOLUTION: Disclosed is a pn junction diode in which a p-type NiO semiconductor and an n-type Ga2O3 semiconductor are d...
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| creator | KAWATARI MIKIHISA |
| description | To provide a pn junction diode in which a p-type NiO semiconductor and an n-type Ga2O3 semiconductor are directly joined to each other and that can suppress reduction in resistivity.SOLUTION: Disclosed is a pn junction diode in which a p-type NiO semiconductor and an n-type Ga2O3 semiconductor are directly joined to each other and a peripheral part of the junction surface between the p-type NiO semiconductor and the n-type Ga2O3 semiconductor is covered with an atmosphere blocking member. The pn junction diode of the present disclosure may further include a p-type semiconductor side electrode on the p-type NiO semiconductor side and an n-type semiconductor side electrode on the n-type Ga2O3 semiconductor side.SELECTED DRAWING: Figure 1
【課題】本開示は、抵抗率の低下が抑制された、ｐ型ＮｉＯ半導体とｎ型Ｇａ２Ｏ３半導体とが直接に接合されているｐｎ接合ダイオードを提供する。【解決手段】本開示のｐｎ接合ダイオードは、ｐ型ＮｉＯ半導体とｎ型Ｇａ２Ｏ３半導体とが直接に接合されているｐｎ接合ダイオードであって、上記ｐ型ＮｉＯ半導体と上記ｎ型Ｇａ２Ｏ３半導体との接合面の周縁部が、大気遮断部材によって被覆されている、ｐｎ接合ダイオードである。本開示のｐｎ接合ダイオードは、ｐ型ＮｉＯ半導体側にｐ型半導体側電極を、ｎ型Ｇａ２Ｏ３半導体側にｎ型半導体側電極を更に有していることができる。【選択図】図１ |
| format | Patent |
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【課題】本開示は、抵抗率の低下が抑制された、ｐ型ＮｉＯ半導体とｎ型Ｇａ２Ｏ３半導体とが直接に接合されているｐｎ接合ダイオードを提供する。【解決手段】本開示のｐｎ接合ダイオードは、ｐ型ＮｉＯ半導体とｎ型Ｇａ２Ｏ３半導体とが直接に接合されているｐｎ接合ダイオードであって、上記ｐ型ＮｉＯ半導体と上記ｎ型Ｇａ２Ｏ３半導体との接合面の周縁部が、大気遮断部材によって被覆されている、ｐｎ接合ダイオードである。本開示のｐｎ接合ダイオードは、ｐ型ＮｉＯ半導体側にｐ型半導体側電極を、ｎ型Ｇａ２Ｏ３半導体側にｎ型半導体側電極を更に有していることができる。【選択図】図１</description><language>eng ; jpn</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20211014&DB=EPODOC&CC=JP&NR=2021166256A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20211014&DB=EPODOC&CC=JP&NR=2021166256A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KAWATARI MIKIHISA</creatorcontrib><title>PN JUNCTION DIODE</title><description>To provide a pn junction diode in which a p-type NiO semiconductor and an n-type Ga2O3 semiconductor are directly joined to each other and that can suppress reduction in resistivity.SOLUTION: Disclosed is a pn junction diode in which a p-type NiO semiconductor and an n-type Ga2O3 semiconductor are directly joined to each other and a peripheral part of the junction surface between the p-type NiO semiconductor and the n-type Ga2O3 semiconductor is covered with an atmosphere blocking member. The pn junction diode of the present disclosure may further include a p-type semiconductor side electrode on the p-type NiO semiconductor side and an n-type semiconductor side electrode on the n-type Ga2O3 semiconductor side.SELECTED DRAWING: Figure 1
【課題】本開示は、抵抗率の低下が抑制された、ｐ型ＮｉＯ半導体とｎ型Ｇａ２Ｏ３半導体とが直接に接合されているｐｎ接合ダイオードを提供する。【解決手段】本開示のｐｎ接合ダイオードは、ｐ型ＮｉＯ半導体とｎ型Ｇａ２Ｏ３半導体とが直接に接合されているｐｎ接合ダイオードであって、上記ｐ型ＮｉＯ半導体と上記ｎ型Ｇａ２Ｏ３半導体との接合面の周縁部が、大気遮断部材によって被覆されている、ｐｎ接合ダイオードである。本開示のｐｎ接合ダイオードは、ｐ型ＮｉＯ半導体側にｐ型半導体側電極を、ｎ型Ｇａ２Ｏ３半導体側にｎ型半導体側電極を更に有していることができる。【選択図】図１</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZBAM8FPwCvVzDvH091Nw8fR3ceVhYE1LzClO5YXS3AxKbq4hzh66qQX58anFBYnJqXmpJfFeAUYGRoaGZmZGpmaOxkQpAgBOhh4X</recordid><startdate>20211014</startdate><enddate>20211014</enddate><creator>KAWATARI MIKIHISA</creator><scope>EVB</scope></search><sort><creationdate>20211014</creationdate><title>PN JUNCTION DIODE</title><author>KAWATARI MIKIHISA</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2021166256A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; jpn</language><creationdate>2021</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>KAWATARI MIKIHISA</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KAWATARI MIKIHISA</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>PN JUNCTION DIODE</title><date>2021-10-14</date><risdate>2021</risdate><abstract>To provide a pn junction diode in which a p-type NiO semiconductor and an n-type Ga2O3 semiconductor are directly joined to each other and that can suppress reduction in resistivity.SOLUTION: Disclosed is a pn junction diode in which a p-type NiO semiconductor and an n-type Ga2O3 semiconductor are directly joined to each other and a peripheral part of the junction surface between the p-type NiO semiconductor and the n-type Ga2O3 semiconductor is covered with an atmosphere blocking member. The pn junction diode of the present disclosure may further include a p-type semiconductor side electrode on the p-type NiO semiconductor side and an n-type semiconductor side electrode on the n-type Ga2O3 semiconductor side.SELECTED DRAWING: Figure 1
【課題】本開示は、抵抗率の低下が抑制された、ｐ型ＮｉＯ半導体とｎ型Ｇａ２Ｏ３半導体とが直接に接合されているｐｎ接合ダイオードを提供する。【解決手段】本開示のｐｎ接合ダイオードは、ｐ型ＮｉＯ半導体とｎ型Ｇａ２Ｏ３半導体とが直接に接合されているｐｎ接合ダイオードであって、上記ｐ型ＮｉＯ半導体と上記ｎ型Ｇａ２Ｏ３半導体との接合面の周縁部が、大気遮断部材によって被覆されている、ｐｎ接合ダイオードである。本開示のｐｎ接合ダイオードは、ｐ型ＮｉＯ半導体側にｐ型半導体側電極を、ｎ型Ｇａ２Ｏ３半導体側にｎ型半導体側電極を更に有していることができる。【選択図】図１</abstract><oa>free_for_read</oa></addata></record> |
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| title | PN JUNCTION DIODE |
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