ETCHING METHOD AND ETCHING DEVICE

To quickly etch a silicon film on a substrate.SOLUTION: An etching method includes a step of supplying fluorine gas and amine gas to a substrate where a silicon film is formed on a surface thereof and etching the silicon film.SELECTED DRAWING: Figure 3A 【課題】基板におけるシリコン膜を速やかにエッチングすること【解決手段】表面にシリコン膜が形成...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	TAKAHASHI NOBUHIRO, ORII TAKEHIKO
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	To quickly etch a silicon film on a substrate.SOLUTION: An etching method includes a step of supplying fluorine gas and amine gas to a substrate where a silicon film is formed on a surface thereof and etching the silicon film.SELECTED DRAWING: Figure 3A 【課題】基板におけるシリコン膜を速やかにエッチングすること【解決手段】表面にシリコン膜が形成された基板にフッ素ガスとアミンガスとを供給して、当該シリコン膜をエッチングする。【選択図】図３Ａ