SEMICONDUCTOR PHOTORESIST COMPOSITION AND METHOD OF FORMING PATTERNS USING THE SAME

To provide a semiconductor photoresist composition excellent in etch resistance, sensitivity, resolution and pattern-forming capability.SOLUTION: A semiconductor photoresist composition includes an organometallic compound represented by Chemical Formula 1 in the figure, a photoacid generator (PAG),...

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Bibliographische Detailangaben
Hauptverfasser:	CHEON HWAN-SUNG, KANG EUNMI, CHAE SEUNGYONG, WOO CHANG SOO, KIM TAEHO, NAMGUNG RAN, MOON KYUNG SOO, KIM JIMIN, KIM JAE-HYUN, HAN SEUNG
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	ADHESIVES APPARATUS SPECIALLY ADAPTED THEREFOR CHEMISTRY CINEMATOGRAPHY DYES ELECTROGRAPHY HOLOGRAPHY MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE MATERIALS THEREFOR METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS ORIGINALS THEREFOR PAINTS PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS POLISHES
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Beschreibung
Zusammenfassung:	To provide a semiconductor photoresist composition excellent in etch resistance, sensitivity, resolution and pattern-forming capability.SOLUTION: A semiconductor photoresist composition includes an organometallic compound represented by Chemical Formula 1 in the figure, a photoacid generator (PAG), and a solvent. Specific details of Chemical Formula 1 are as defined in the specification.SELECTED DRAWING: Figure 5 【課題】エッチング耐性、感度、解像度、およびパターン形成性に優れた半導体フォトレジスト用組成物を提供する。【解決手段】下記化学式１で表される有機金属化合物、光酸発生剤（ＰＡＧ）、および溶媒を含む半導体フォトレジスト用組成物：化学式１に対する具体的な内容は、明細書中で定義されたとおりである。【選択図】図５