SUBSTRATE PROCESSING DEVICE, SUBSTRATE PROCESSING SYSTEM, CONTROL METHOD OF SUBSTRATE PROCESSING DEVICE, AND CONTROL METHOD OF SUBSTRATE PROCESSING SYSTEM

To provide a technique for performing processing with desired processing characteristics according to a processing content in a plasma etching device.SOLUTION: A substrate processing device includes: a board mounting table on which a board is mounted; a first high-frequency power supply that outputs first high-frequency power of a first frequency to the board mounting table; a second high-frequency power supply that outputs second high-frequency power of a second frequency lower than the first frequency to the board mounting table; and a control unit that controls the first high frequency power supply. The first high-frequency power supply includes a reflected wave detector that detects a reflected wave input from the board mounting table. The control unit determines a set value according to the processing content, and controls the first high frequency power supply such that the effective power which is a difference obtained by subtracting the power of the reflected wave detected by the reflected wave detector from outputs power of the first high-frequency power supply becomes the set value.SELECTED DRAWING: Figure 1 【課題】プラズマエッチング装置において、処理内容に応じて所望の処理特性で処理を行う技術を提供する。【解決手段】基板を載置する基板載置台と、第１周波数の第１高周波電力を前記基板載置台に出力する第１高周波電源と、前記第１周波数より低い第２周波数の第２高周波電力を前記基板載置台に出力する第２高周波電源と、前記第１高周波電源を制御する制御部と、を備え、前記第１高周波電源は、前記基板載置台から入力される反射波を検出する反射波検出器を備え、前記制御部は、処理内容に応じて設定値を定め、前記第１高周波電源の出力パワーから、前記反射波検出器が検出した前記反射波のパワーを引いた差である実効パワーが、前記設定値になるように前記第１高周波電源を制御する基板処理装置。【選択図】図１