SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

To provide a semiconductor device capable of reproducibly reducing the contact resistance between a semiconductor substrate and an electrode with a simple configuration, and a method for manufacturing the semiconductor device.SOLUTION: It has a substrate into which impurities of a first conductivity...

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Hauptverfasser: HARAGUCHI MASAHIRO, KANEKO YUICHI, FURUTA KENICHI, KUROKI HIROKI, TERADA NOBUHIRO, INOUE TAKESHI, TSUJIMOTO MASAO
Format: Patent
Sprache:eng ; jpn
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Zusammenfassung:To provide a semiconductor device capable of reproducibly reducing the contact resistance between a semiconductor substrate and an electrode with a simple configuration, and a method for manufacturing the semiconductor device.SOLUTION: It has a substrate into which impurities of a first conductivity type with a first concentration are introduced, an impurity region of a first conductivity type with a concentration lower than the first concentration formed in a region from a first surface of the substrate on which the circuit element is formed to a predetermined depth, an uneven region formed in the region into which impurities of the first concentration are introduced on a second surface of the substrate, and an electrode formed above the uneven region.SELECTED DRAWING: Figure 1 【課題】簡易な構成で再現性よく、半導体基板と電極との接触抵抗を低減することが可能な半導体装置、および半導体装置の製造方法を提供すること。【解決手段】第1の導電型の第1の濃度の不純物が導入された基板と、回路素子が形成された基板の第1の面から予め定められた深さまでの領域に形成された第1の濃度より低い濃度の第1の導電型の不純物領域と、基板の第2の面の第1の濃度の不純物が導入された領域に形成された凹凸領域と、凹凸領域の上部に形成された電極と、を含む。【選択図】図1