PIEZOELECTRIC THIN FILM RESONATOR, FILTER AND MULTIPLEXER

PIEZOELECTRIC THIN FILM RESONATOR, FILTER AND MULTIPLEXER

To provide a piezoelectric thin film resonator in which damage to a piezoelectric film can be suppressed.SOLUTION: A piezoelectric thin film resonator 100 includes: a substrate 10; a support layer 18 provided on the substrate 10; a lower electrode 12 provided on the support layer 18; a piezoelectric...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: OKAMURA RYUICHI, ASADA MINORU, NISHIZAWA TOSHIO
Format: Patent
Sprache:eng ; jpn
Schlagworte:
BASIC ELECTRONIC CIRCUITRY
ELECTRICITY
IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS
RESONATORS
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator OKAMURA RYUICHI
ASADA MINORU
NISHIZAWA TOSHIO
description To provide a piezoelectric thin film resonator in which damage to a piezoelectric film can be suppressed.SOLUTION: A piezoelectric thin film resonator 100 includes: a substrate 10; a support layer 18 provided on the substrate 10; a lower electrode 12 provided on the support layer 18; a piezoelectric film 14 which is provided on the lower electrode 12 and which has a first coefficient of linear expansion, the absolute value of a difference between the first coefficient of linear expansion and a third coefficient of linear expansion of the support layer 18 being smaller than the absolute value of a difference between the first coefficient of linear expansion and a second coefficient of linear expansion of the substrate 10; and an upper electrode 16 which is provided on the piezoelectric film 14 and which overlaps, in plan view, the lower electrode 12 and a gap 30 formed between the substrate 10 and the lower electrode 12.SELECTED DRAWING: Figure 1 【課題】圧電膜の破損が抑制された圧電薄膜共振器を提供する。【解決手段】圧電薄膜共振器１００は、基板１０と、基板１０上に設けられた支持層１８と、支持層１８上に設けられた下部電極１２と、下部電極１２上に設けられ、第１線膨張係数を有し、第１線膨張係数と基板１０の第２線膨張係数との差の絶対値よりも第１線膨張係数と支持層１８の第３線膨張係数との差の絶対値が小さい圧電膜１４と、圧電膜１４上に設けられ、基板１０と下部電極１２との間に形成された空隙３０および下部電極１２に平面視において重なる上部電極１６とを備える。【選択図】図１
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2021150922A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2021150922A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2021150922A3</originalsourceid><addsrcrecordid>eNrjZLAM8HSN8nf1cXUOCfJ0Vgjx8PRTcPP08VUIcg3293MM8Q_SAfFDXIMUHP1cFHxDfUI8A3xcI1yDeBhY0xJzilN5oTQ3g5Kba4izh25qQX58anFBYnJqXmpJvFeAkYGRoaGpgaWRkaMxUYoA8IMpTg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>PIEZOELECTRIC THIN FILM RESONATOR, FILTER AND MULTIPLEXER</title><source>esp@cenet</source><creator>OKAMURA RYUICHI ; ASADA MINORU ; NISHIZAWA TOSHIO</creator><creatorcontrib>OKAMURA RYUICHI ; ASADA MINORU ; NISHIZAWA TOSHIO</creatorcontrib><description>To provide a piezoelectric thin film resonator in which damage to a piezoelectric film can be suppressed.SOLUTION: A piezoelectric thin film resonator 100 includes: a substrate 10; a support layer 18 provided on the substrate 10; a lower electrode 12 provided on the support layer 18; a piezoelectric film 14 which is provided on the lower electrode 12 and which has a first coefficient of linear expansion, the absolute value of a difference between the first coefficient of linear expansion and a third coefficient of linear expansion of the support layer 18 being smaller than the absolute value of a difference between the first coefficient of linear expansion and a second coefficient of linear expansion of the substrate 10; and an upper electrode 16 which is provided on the piezoelectric film 14 and which overlaps, in plan view, the lower electrode 12 and a gap 30 formed between the substrate 10 and the lower electrode 12.SELECTED DRAWING: Figure 1 【課題】圧電膜の破損が抑制された圧電薄膜共振器を提供する。【解決手段】圧電薄膜共振器１００は、基板１０と、基板１０上に設けられた支持層１８と、支持層１８上に設けられた下部電極１２と、下部電極１２上に設けられ、第１線膨張係数を有し、第１線膨張係数と基板１０の第２線膨張係数との差の絶対値よりも第１線膨張係数と支持層１８の第３線膨張係数との差の絶対値が小さい圧電膜１４と、圧電膜１４上に設けられ、基板１０と下部電極１２との間に形成された空隙３０および下部電極１２に平面視において重なる上部電極１６とを備える。【選択図】図１</description><language>eng ; jpn</language><subject>BASIC ELECTRONIC CIRCUITRY ; ELECTRICITY ; IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS ; RESONATORS</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20210927&amp;DB=EPODOC&amp;CC=JP&amp;NR=2021150922A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20210927&amp;DB=EPODOC&amp;CC=JP&amp;NR=2021150922A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>OKAMURA RYUICHI</creatorcontrib><creatorcontrib>ASADA MINORU</creatorcontrib><creatorcontrib>NISHIZAWA TOSHIO</creatorcontrib><title>PIEZOELECTRIC THIN FILM RESONATOR, FILTER AND MULTIPLEXER</title><description>To provide a piezoelectric thin film resonator in which damage to a piezoelectric film can be suppressed.SOLUTION: A piezoelectric thin film resonator 100 includes: a substrate 10; a support layer 18 provided on the substrate 10; a lower electrode 12 provided on the support layer 18; a piezoelectric film 14 which is provided on the lower electrode 12 and which has a first coefficient of linear expansion, the absolute value of a difference between the first coefficient of linear expansion and a third coefficient of linear expansion of the support layer 18 being smaller than the absolute value of a difference between the first coefficient of linear expansion and a second coefficient of linear expansion of the substrate 10; and an upper electrode 16 which is provided on the piezoelectric film 14 and which overlaps, in plan view, the lower electrode 12 and a gap 30 formed between the substrate 10 and the lower electrode 12.SELECTED DRAWING: Figure 1 【課題】圧電膜の破損が抑制された圧電薄膜共振器を提供する。【解決手段】圧電薄膜共振器１００は、基板１０と、基板１０上に設けられた支持層１８と、支持層１８上に設けられた下部電極１２と、下部電極１２上に設けられ、第１線膨張係数を有し、第１線膨張係数と基板１０の第２線膨張係数との差の絶対値よりも第１線膨張係数と支持層１８の第３線膨張係数との差の絶対値が小さい圧電膜１４と、圧電膜１４上に設けられ、基板１０と下部電極１２との間に形成された空隙３０および下部電極１２に平面視において重なる上部電極１６とを備える。【選択図】図１</description><subject>BASIC ELECTRONIC CIRCUITRY</subject><subject>ELECTRICITY</subject><subject>IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS</subject><subject>RESONATORS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLAM8HSN8nf1cXUOCfJ0Vgjx8PRTcPP08VUIcg3293MM8Q_SAfFDXIMUHP1cFHxDfUI8A3xcI1yDeBhY0xJzilN5oTQ3g5Kba4izh25qQX58anFBYnJqXmpJvFeAkYGRoaGpgaWRkaMxUYoA8IMpTg</recordid><startdate>20210927</startdate><enddate>20210927</enddate><creator>OKAMURA RYUICHI</creator><creator>ASADA MINORU</creator><creator>NISHIZAWA TOSHIO</creator><scope>EVB</scope></search><sort><creationdate>20210927</creationdate><title>PIEZOELECTRIC THIN FILM RESONATOR, FILTER AND MULTIPLEXER</title><author>OKAMURA RYUICHI ; ASADA MINORU ; NISHIZAWA TOSHIO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2021150922A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; jpn</language><creationdate>2021</creationdate><topic>BASIC ELECTRONIC CIRCUITRY</topic><topic>ELECTRICITY</topic><topic>IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS</topic><topic>RESONATORS</topic><toplevel>online_resources</toplevel><creatorcontrib>OKAMURA RYUICHI</creatorcontrib><creatorcontrib>ASADA MINORU</creatorcontrib><creatorcontrib>NISHIZAWA TOSHIO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>OKAMURA RYUICHI</au><au>ASADA MINORU</au><au>NISHIZAWA TOSHIO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>PIEZOELECTRIC THIN FILM RESONATOR, FILTER AND MULTIPLEXER</title><date>2021-09-27</date><risdate>2021</risdate><abstract>To provide a piezoelectric thin film resonator in which damage to a piezoelectric film can be suppressed.SOLUTION: A piezoelectric thin film resonator 100 includes: a substrate 10; a support layer 18 provided on the substrate 10; a lower electrode 12 provided on the support layer 18; a piezoelectric film 14 which is provided on the lower electrode 12 and which has a first coefficient of linear expansion, the absolute value of a difference between the first coefficient of linear expansion and a third coefficient of linear expansion of the support layer 18 being smaller than the absolute value of a difference between the first coefficient of linear expansion and a second coefficient of linear expansion of the substrate 10; and an upper electrode 16 which is provided on the piezoelectric film 14 and which overlaps, in plan view, the lower electrode 12 and a gap 30 formed between the substrate 10 and the lower electrode 12.SELECTED DRAWING: Figure 1 【課題】圧電膜の破損が抑制された圧電薄膜共振器を提供する。【解決手段】圧電薄膜共振器１００は、基板１０と、基板１０上に設けられた支持層１８と、支持層１８上に設けられた下部電極１２と、下部電極１２上に設けられ、第１線膨張係数を有し、第１線膨張係数と基板１０の第２線膨張係数との差の絶対値よりも第１線膨張係数と支持層１８の第３線膨張係数との差の絶対値が小さい圧電膜１４と、圧電膜１４上に設けられ、基板１０と下部電極１２との間に形成された空隙３０および下部電極１２に平面視において重なる上部電極１６とを備える。【選択図】図１</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng ; jpn
recordid cdi_epo_espacenet_JP2021150922A
source esp@cenet
subjects BASIC ELECTRONIC CIRCUITRY
ELECTRICITY
IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS
RESONATORS
title PIEZOELECTRIC THIN FILM RESONATOR, FILTER AND MULTIPLEXER
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-31T23%3A06%3A10IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=OKAMURA%20RYUICHI&rft.date=2021-09-27&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EJP2021150922A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true