PIEZOELECTRIC THIN FILM RESONATOR, FILTER AND MULTIPLEXER
To provide a piezoelectric thin film resonator in which damage to a piezoelectric film can be suppressed.SOLUTION: A piezoelectric thin film resonator 100 includes: a substrate 10; a support layer 18 provided on the substrate 10; a lower electrode 12 provided on the support layer 18; a piezoelectric...
Gespeichert in:
Hauptverfasser: | , , |
---|---|
Format: | Patent |
Sprache: | eng ; jpn |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | To provide a piezoelectric thin film resonator in which damage to a piezoelectric film can be suppressed.SOLUTION: A piezoelectric thin film resonator 100 includes: a substrate 10; a support layer 18 provided on the substrate 10; a lower electrode 12 provided on the support layer 18; a piezoelectric film 14 which is provided on the lower electrode 12 and which has a first coefficient of linear expansion, the absolute value of a difference between the first coefficient of linear expansion and a third coefficient of linear expansion of the support layer 18 being smaller than the absolute value of a difference between the first coefficient of linear expansion and a second coefficient of linear expansion of the substrate 10; and an upper electrode 16 which is provided on the piezoelectric film 14 and which overlaps, in plan view, the lower electrode 12 and a gap 30 formed between the substrate 10 and the lower electrode 12.SELECTED DRAWING: Figure 1
【課題】圧電膜の破損が抑制された圧電薄膜共振器を提供する。【解決手段】圧電薄膜共振器100は、基板10と、基板10上に設けられた支持層18と、支持層18上に設けられた下部電極12と、下部電極12上に設けられ、第1線膨張係数を有し、第1線膨張係数と基板10の第2線膨張係数との差の絶対値よりも第1線膨張係数と支持層18の第3線膨張係数との差の絶対値が小さい圧電膜14と、圧電膜14上に設けられ、基板10と下部電極12との間に形成された空隙30および下部電極12に平面視において重なる上部電極16とを備える。【選択図】図1 |
---|