SEMICONDUCTOR DEVICE

To provide a semiconductor device having high adhesion between an electrode and a substrate and high reliability to lower on-resistance at the electrode on a surface (rear surface) of the substrate.SOLUTION: A semiconductor device 100 includes a substrate 10 including a semiconductor material, an el...

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Bibliographische Detailangaben
Hauptverfasser: EZAKI AKIRA, ONZUKA SHINJI
Format: Patent
Sprache:eng ; jpn
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Beschreibung
Zusammenfassung:To provide a semiconductor device having high adhesion between an electrode and a substrate and high reliability to lower on-resistance at the electrode on a surface (rear surface) of the substrate.SOLUTION: A semiconductor device 100 includes a substrate 10 including a semiconductor material, an electrode 20 including a metal material provided on the substrate surface 12 of the substrate, and a mixing member 30 including the semiconductor material and the metal material provided in contact with the electrodes on the substrate surface. At the edge of the substrate, a part of the substrate surface is exposed (exposed portion 16 of the substrate surface). Further, in a plane perpendicular to the substrate surface, the end portion of the upper surface of the electrode includes a chamfered portion 24.SELECTED DRAWING: Figure 1 【課題】基板の片方の面(裏面)に電極において、オン抵抗を低くするため、この電極と基板の密着性が高く、信頼性の高い半導体装置を提供する。【解決手段】半導体装置100において、半導体材料を含む基板10と、基板の基板面12の上に設けられた、金属材料を含む電極20と、基板面の上において、電極に接して設けられた、半導体材料および金属材料を含む混合部材30と、を備える。基板の端部において、基板面の一部は露出(基板面の露出した部分16)する。また、基板面に垂直な面内において、前記電極の上面の端部は面取り部24を有する。【選択図】図1