SILICON CARBIDE REFRACTORY, AND MANUFACTURING METHOD THEREOF

To provide a silicon carbide refractory having at the same time, excellent hot load bearing and high thermal conductance, and high thermal shock resistance, not generating fissure or crack in use, and having a long useful life.SOLUTION: A silicon carbide refractory is mainly composed of a composite...

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Hauptverfasser: ARIGA KIKUO, KUDO SHIGEKI, ISHII AKITO
Format: Patent
Sprache:eng ; jpn
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Zusammenfassung:To provide a silicon carbide refractory having at the same time, excellent hot load bearing and high thermal conductance, and high thermal shock resistance, not generating fissure or crack in use, and having a long useful life.SOLUTION: A silicon carbide refractory is mainly composed of a composite material formed by composing a silicon carbide material with a low hot linear expansion coefficient oxide material, which is an oxide material having a hot linear expansion coefficient at 1,000°C of 0.2% or less, and a compounding ratio of the composite material to the whole is adjusted at 90 mass% or more. Further the compounding ratio to the whole is adjusted so that the silicon carbide material is 60 mass% or more and less than 95 mass%, and that low hot linear expansion coefficient oxide material is 5 mass% or more and less than 40 mass%.SELECTED DRAWING: None 【課題】良好な熱間耐荷重性・高熱伝導性と高い耐熱衝撃性とを兼備しており、使用時に亀裂や割れが発生せず耐用寿命の長い炭化硅素系耐火物を提供する。【解決手段】本発明に係る炭化硅素系耐火物は、炭化硅素質材と1000℃における熱間線膨張率が0.2%以下の酸化物材である低熱間線膨張率酸化物材とを複合してなる複合材を主原料とするものであり、その複合材の全体に対する配合比率が90質量%以上に調整されている。さらに、全体に対する配合比率で炭化硅素材が60質量%以上95質量%未満、低熱間線膨張率酸化物材が5質量%以上40質量%未満に調整されている。【選択図】なし