SEMICONDUCTOR STORAGE DEVICE

To provide a semiconductor storage device capable of easily achieving higher integration.SOLUTION: A semiconductor storage device comprises: a plurality of first conductive layers 110A disposed separated from each other in a first direction and extending in a second direction crossing the first direction; a plurality of second conductive layers 110B disposed separated from the plurality of first conductive layers in the first direction and extending in the second direction; a semiconductor layer 120 extending in the first direction and facing the plurality of first conductive layers and the plurality of second conductive layers; a gate insulation layer 130 provided between the plurality of first conductive layers and the plurality of second conductive layers, and the semiconductor layer; a plurality of first insulation units ST extending in the plurality of first conductive layers and the plurality of second conductive layers in the first and second directions and segmenting the plurality of first conductive layers and the plurality of second conductive layers in a third direction crossing the first and second directions; and a plurality of second insulation units SHE extending in the plurality of second conductive layers in the first and second directions and segmenting the plurality of second conductive layers into two or more pieces between first insulation units being adjacent in the third direction. The plurality of first conductive layers are continuously formed from a first material per layer between the first insulation units being adjacent in the third direction, and the plurality of second conductive layers are formed from a second material different from the first material.SELECTED DRAWING: Figure 8 【課題】高集積化の容易な半導体記憶装置を提供する。【解決手段】半導体記憶装置は、第１方向に互いに離間して配設され第１方向と交差する第２方向に延びる複数の第１導電層１１０Ａと、複数の第１導電層と第１方向に離間して配設され第２方向に延びる第２導電層１１０Ｂと、第１方向に延伸し、複数の第１導電層及び第２導電層と対向する半導体層１２０と、複数の第１導電層及び第２導電層と半導体層との間に設けられたゲート絶縁層１３０と、複数の第１導電層及び第２導電層内を第１方向及び第２方向に延伸し、複数の第１導電層及び第２導電層を第１方向及び第２方向と交差する第３方向に分断する複数の第１絶縁部ＳＴと、第２導電層内を第１方向及び第２方向に延伸し、第３方向に隣接する第１絶縁部の間で、第２導電層を第３方向に２つ以上に分断する複数の第２絶縁部ＳＨＥと、を備え、複数の第１導電層は、第３方向に隣接する第１絶縁部の間で各層毎に連続して第１材料から形成され、第２導電層は、第１材料とは異なる第２材料から形成される。【選択図】図８