SUBSTRATE AND LIGHT-EMITTING ELEMENT

To provide a substrate having an aluminum nitride layer excellent in crystallinity.SOLUTION: A substrate 10 includes an aluminum nitride layer L1 containing crystalline aluminum nitride, and a sapphire layer L2 containing crystalline α-alumina. The aluminum nitride layer L1 is directly piled on the...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	OIDO ATSUSHI, YAMAZAWA KAZUTO
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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