SEMICONDUCTOR DEVICE FOR ELECTRIC POWER AND MANUFACTURING METHOD THEREFOR

To provide a semiconductor device for electric power, capable of suppressing generation of a shrinkage cavity of a joint material without causing an adverse effect on the layout or insulation performance of a semiconductor element.SOLUTION: A semiconductor device 101 for electric power includes: a radiator plate 1; an insulation substrate 3 joined by a joint material containing a plurality of elements different in a freezing point in a junction region 12 of a top face of the radiator plate 1; a semiconductor element 5 mounted on a top face of the insulation substrate 3; and a boding wire 8w bonded to surround the semiconductor element 5 in plan view in the junction region 12 of the top face of the radiator plate 1.SELECTED DRAWING: Figure 3 【課題】本開示は、電力用半導体装置において半導体素子のレイアウトまたは絶縁性能に影響を及ぼすことなく、接合材のヒケスを抑制することを目的とする。【解決手段】電力用半導体装置１０１は、放熱板１と、放熱板１の上面の接合領域１２に、凝固点の異なる複数の元素を含有する接合材によって接合される絶縁基板３と、絶縁基板３の上面に搭載される半導体素子５と、放熱板１の上面の接合領域１２に、平面視において半導体素子５を囲むようにボンディングされたボンディングワイヤ８ｗと、を備える。【選択図】図３