SEMICONDUCTOR CIRCUIT

To provide a technique for reducing an influence to a semiconductor device as much as possible when a variation in the magnitude of a current flowing through each of semiconductor elements of the semiconductor device including the semiconductor elements connected in parallel is suppressed.SOLUTION:...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	ISHII TAKAAKI, OKADA WATARU, NOSAKA NORIMOTO, CHEN CHEN
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC,OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWERSUPPLY SYSTEMS BASIC ELECTRONIC CIRCUITRY CONTROL OR REGULATION THEREOF CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUTPOWER CONVERSION OR DISTRIBUTION OF ELECTRIC POWER ELECTRICITY GENERATION PULSE TECHNIQUE
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Beschreibung
Zusammenfassung:	To provide a technique for reducing an influence to a semiconductor device as much as possible when a variation in the magnitude of a current flowing through each of semiconductor elements of the semiconductor device including the semiconductor elements connected in parallel is suppressed.SOLUTION: A semiconductor circuit includes: a first inductance part connected to a source electrode of a first semiconductor element in series; and a second inductance part connected to the source electrode of a second semiconductor element in series which is connected to the first semiconductor element in parallel. The first inductance part and the second inductance part are arranged so that induced electromotive force is induced in the first inductance part and the second inductance part by magnetic correlation, and a current flowing through the first inductance part and the second inductance part is strengthened in the same direction.SELECTED DRAWING: Figure 1 【課題】並列に接続された半導体素子を含む半導体デバイスの該半導体素子の各々に流れる電流の大きさのばらつきを抑制する場合に、半導体デバイスへの影響を可及的に低減する技術を提供する。【解決手段】本開示は、第１の半導体素子のソース電極に直列に接続される第１のインダクタンス部と、前記第１の半導体素子と並列に接続された第２の半導体素子のソース電極に直列に接続される第２のインダクタンス部と、を備え、前記第１のインダクタンス部と前記第２のインダクタンス部とは、磁気的な相互作用により前記第１のインダクタンス部及び前記第２のインダクタンス部に誘導起電力が誘起され、前記第１のインダクタンス部及び前記第２のインダクタンス部に流れる電流が同方向に強め合うように配置される、半導体回路である。【選択図】図１