FORMATION METHOD OF METAL WIRING AND METAL WIRING STRUCTURE
To provide a formation method of metal wiring and a metal wiring structure that do not decrease the reliability of electronic components.SOLUTION: In a formation method of a metal wiring, a laminated structure is prepared that includes a metal wiring layer containing copper and an interlayer insulat...
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| Sprache: | eng ; jpn |
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| Zusammenfassung: | To provide a formation method of metal wiring and a metal wiring structure that do not decrease the reliability of electronic components.SOLUTION: In a formation method of a metal wiring, a laminated structure is prepared that includes a metal wiring layer containing copper and an interlayer insulating layer that is laminated on the metal wiring layer and is provided with an opening in which a part of the surface of the metal wiring layer is exposed is formed. By first sputtering film formation, a copper-aluminum layer containing nitrogen is formed as an initial layer on the surface of the interlayer insulating layer and the side surface of the opening. By second sputtering film formation, a copper-aluminum layer is formed on the surface and the side surface via the initial layer.SELECTED DRAWING: Figure 1
【課題】電子部品の信頼性を低減させない金属配線の形成方法及び金属配線構造体を提供する。【解決手段】金属配線の形成方法で、銅を含む金属配線層と、上記金属配線層に積層され、上記金属配線層の表面の一部が露出する開口が設けられた層間絶縁層とを有する積層構造体が準備される。第１スパッタリング成膜により、上記層間絶縁層の表面と、上記開口の側面とに、初期層として窒素が含有する銅アルミニウム層が形成される。第２スパッタリング成膜により、上記表面及び上記側面に、上記初期層を介して銅アルミニウム層が形成される。【選択図】図１ |
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