METHOD FOR MANUFACTURING TANTALUM NITRIDE

To provide a method for producing tantalum nitride having a small particle diameter and a large specific surface area.SOLUTION: A method for producing tantalum nitride comprises a step of baking a tantalum compound in an atmosphere of a mixed gas of nitrogen gas and ammonia gas, in which a volume ra...

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Hauptverfasser:	HORIGUCHI KAORI, TAKANO MIKU, SUZUKI MASAHARU, ICHINOTSUBO YUKITERU
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOIDCHEMISTRY CHEMISTRY COMPOUNDS THEREOF INORGANIC CHEMISTRY METALLURGY NON-METALLIC ELEMENTS PERFORMING OPERATIONS PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL THEIR RELEVANT APPARATUS TRANSPORTING
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Beschreibung
Zusammenfassung:	To provide a method for producing tantalum nitride having a small particle diameter and a large specific surface area.SOLUTION: A method for producing tantalum nitride comprises a step of baking a tantalum compound in an atmosphere of a mixed gas of nitrogen gas and ammonia gas, in which a volume ratio (nitrogen/ammonia) of the nitrogen gas to the ammonia gas in the mixed gas is 9 or less.SELECTED DRAWING: None 【課題】粒子径が小さく、比表面積の大きな窒化タンタルの製造方法を提供すること。【解決手段】タンタル化合物を、窒素ガス及びアンモニアガスの混合ガスの雰囲気にて焼成する工程を含み、混合ガス中の窒素ガスとアンモニアガスとの体積比（窒素／アンモニア）が９以下である、窒化タンタルの製造方法。【選択図】なし