SPUTTERING TARGET

To provide a sputtering target which allows suppression of contamination of a fluorine element being an impurity in the sputtering target, suppression of generation of an abnormal discharge due to fluorine when a thin film is formed by using the sputtering target, and formation of a thin film having...

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Bibliographische Detailangaben
Hauptverfasser:	SUZUKI TAKESHI, OTOMO SHOHEI, NAKAMURA HIRONOBU, MARUKO TOSHIHIRO
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	ALLOYS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL FERROUS OR NON-FERROUS ALLOYS INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TREATMENT OF ALLOYS OR NON-FERROUS METALS
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Beschreibung
Zusammenfassung:	To provide a sputtering target which allows suppression of contamination of a fluorine element being an impurity in the sputtering target, suppression of generation of an abnormal discharge due to fluorine when a thin film is formed by using the sputtering target, and formation of a thin film having a good orientation.SOLUTION: A sputtering target includes aluminum, and one or both of a rare earth element and a titanium group element. The content of fluorine is 100 ppm or less.SELECTED DRAWING: Figure 1 【課題】本開示の目的は、スパッタリングターゲット中において不純物であるフッ素元素の混入を抑制したスパッタリングターゲットであって、当該スパッタリングターゲットを用いて薄膜を形成したときにフッ素による異常放電の発生を抑制し、配向性の良い薄膜を形成することができるスパッタリングターゲットを提供することである。【解決手段】本開示のスパッタリングターゲットは、アルミニウムを含み、かつ、希土類元素及びチタン族元素のいずれか一方又は両方をさらに含むスパッタリングターゲットであって、フッ素の含有量が１００ｐｐｍ以下であることを特徴とする。【選択図】図１