POLISHING COMPOSITION
To provide a polishing composition capable of keeping the particle size of abrasive grains stable.SOLUTION: A polishing composition for semiconductor polishing includes silica abrasive grains, silicic acid, a basic compound, and water, and the ratio W2/W1 of the weight W2 of the silicate ion in the...
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| creator | YAGI RISAKO MATSUSHITA TAKAYUKI |
| description | To provide a polishing composition capable of keeping the particle size of abrasive grains stable.SOLUTION: A polishing composition for semiconductor polishing includes silica abrasive grains, silicic acid, a basic compound, and water, and the ratio W2/W1 of the weight W2 of the silicate ion in the polishing composition to the weight W1 of the solid content of the silica abrasive grains in terms of SiO2 is 0.5 to 2.0.SELECTED DRAWING: None
【課題】砥粒の粒子径を安定に保つことができる研磨用組成物を提供する。【解決手段】研磨用組成物は、半導体研磨用の研磨用組成物であって、シリカ砥粒と、ケイ酸と、塩基性化合物と、水とを含み、シリカ砥粒の固形分の重量Ｗ１に対する前記研磨用組成物中のケイ酸イオンのＳｉＯ２換算の重量Ｗ２の比Ｗ２／Ｗ１が０．５〜２．０である。【選択図】なし |
| format | Patent |
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【課題】砥粒の粒子径を安定に保つことができる研磨用組成物を提供する。【解決手段】研磨用組成物は、半導体研磨用の研磨用組成物であって、シリカ砥粒と、ケイ酸と、塩基性化合物と、水とを含み、シリカ砥粒の固形分の重量Ｗ１に対する前記研磨用組成物中のケイ酸イオンのＳｉＯ２換算の重量Ｗ２の比Ｗ２／Ｗ１が０．５〜２．０である。【選択図】なし</description><language>eng ; jpn</language><subject>ADHESIVES ; BASIC ELECTRIC ELEMENTS ; CHEMISTRY ; DRESSING OR CONDITIONING OF ABRADING SURFACES ; DYES ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS ; GRINDING ; MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING ; MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE ; METALLURGY ; MISCELLANEOUS APPLICATIONS OF MATERIALS ; MISCELLANEOUS COMPOSITIONS ; NATURAL RESINS ; PAINTS ; PERFORMING OPERATIONS ; POLISHES ; POLISHING ; SEMICONDUCTOR DEVICES ; TRANSPORTING</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210726&DB=EPODOC&CC=JP&NR=2021106246A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25562,76317</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210726&DB=EPODOC&CC=JP&NR=2021106246A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>YAGI RISAKO</creatorcontrib><creatorcontrib>MATSUSHITA TAKAYUKI</creatorcontrib><title>POLISHING COMPOSITION</title><description>To provide a polishing composition capable of keeping the particle size of abrasive grains stable.SOLUTION: A polishing composition for semiconductor polishing includes silica abrasive grains, silicic acid, a basic compound, and water, and the ratio W2/W1 of the weight W2 of the silicate ion in the polishing composition to the weight W1 of the solid content of the silica abrasive grains in terms of SiO2 is 0.5 to 2.0.SELECTED DRAWING: None
【課題】砥粒の粒子径を安定に保つことができる研磨用組成物を提供する。【解決手段】研磨用組成物は、半導体研磨用の研磨用組成物であって、シリカ砥粒と、ケイ酸と、塩基性化合物と、水とを含み、シリカ砥粒の固形分の重量Ｗ１に対する前記研磨用組成物中のケイ酸イオンのＳｉＯ２換算の重量Ｗ２の比Ｗ２／Ｗ１が０．５〜２．０である。【選択図】なし</description><subject>ADHESIVES</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMISTRY</subject><subject>DRESSING OR CONDITIONING OF ABRADING SURFACES</subject><subject>DYES</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS</subject><subject>GRINDING</subject><subject>MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING</subject><subject>MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE</subject><subject>METALLURGY</subject><subject>MISCELLANEOUS APPLICATIONS OF MATERIALS</subject><subject>MISCELLANEOUS COMPOSITIONS</subject><subject>NATURAL RESINS</subject><subject>PAINTS</subject><subject>PERFORMING OPERATIONS</subject><subject>POLISHES</subject><subject>POLISHING</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>TRANSPORTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZBAN8PfxDPbw9HNXcPb3DfAP9gzx9PfjYWBNS8wpTuWF0twMSm6uIc4euqkF-fGpxQWJyal5qSXxXgFGBkaGhgZmRiZmjsZEKQIA6rYfgQ</recordid><startdate>20210726</startdate><enddate>20210726</enddate><creator>YAGI RISAKO</creator><creator>MATSUSHITA TAKAYUKI</creator><scope>EVB</scope></search><sort><creationdate>20210726</creationdate><title>POLISHING COMPOSITION</title><author>YAGI RISAKO ; MATSUSHITA TAKAYUKI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2021106246A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; jpn</language><creationdate>2021</creationdate><topic>ADHESIVES</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMISTRY</topic><topic>DRESSING OR CONDITIONING OF ABRADING SURFACES</topic><topic>DYES</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS</topic><topic>GRINDING</topic><topic>MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING</topic><topic>MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE</topic><topic>METALLURGY</topic><topic>MISCELLANEOUS APPLICATIONS OF MATERIALS</topic><topic>MISCELLANEOUS COMPOSITIONS</topic><topic>NATURAL RESINS</topic><topic>PAINTS</topic><topic>PERFORMING OPERATIONS</topic><topic>POLISHES</topic><topic>POLISHING</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>TRANSPORTING</topic><toplevel>online_resources</toplevel><creatorcontrib>YAGI RISAKO</creatorcontrib><creatorcontrib>MATSUSHITA TAKAYUKI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>YAGI RISAKO</au><au>MATSUSHITA TAKAYUKI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>POLISHING COMPOSITION</title><date>2021-07-26</date><risdate>2021</risdate><abstract>To provide a polishing composition capable of keeping the particle size of abrasive grains stable.SOLUTION: A polishing composition for semiconductor polishing includes silica abrasive grains, silicic acid, a basic compound, and water, and the ratio W2/W1 of the weight W2 of the silicate ion in the polishing composition to the weight W1 of the solid content of the silica abrasive grains in terms of SiO2 is 0.5 to 2.0.SELECTED DRAWING: None
【課題】砥粒の粒子径を安定に保つことができる研磨用組成物を提供する。【解決手段】研磨用組成物は、半導体研磨用の研磨用組成物であって、シリカ砥粒と、ケイ酸と、塩基性化合物と、水とを含み、シリカ砥粒の固形分の重量Ｗ１に対する前記研磨用組成物中のケイ酸イオンのＳｉＯ２換算の重量Ｗ２の比Ｗ２／Ｗ１が０．５〜２．０である。【選択図】なし</abstract><oa>free_for_read</oa></addata></record> |
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| language | eng ; jpn |
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| subjects | ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY DRESSING OR CONDITIONING OF ABRADING SURFACES DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS PERFORMING OPERATIONS POLISHES POLISHING SEMICONDUCTOR DEVICES TRANSPORTING |
| title | POLISHING COMPOSITION |
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