POLISHING COMPOSITION

To provide a polishing composition capable of keeping the particle size of abrasive grains stable.SOLUTION: A polishing composition for semiconductor polishing includes silica abrasive grains, silicic acid, a basic compound, and water, and the ratio W2/W1 of the weight W2 of the silicate ion in the...

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Bibliographische Detailangaben
Hauptverfasser: YAGI RISAKO, MATSUSHITA TAKAYUKI
Format: Patent
Sprache:eng ; jpn
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Beschreibung
Zusammenfassung:To provide a polishing composition capable of keeping the particle size of abrasive grains stable.SOLUTION: A polishing composition for semiconductor polishing includes silica abrasive grains, silicic acid, a basic compound, and water, and the ratio W2/W1 of the weight W2 of the silicate ion in the polishing composition to the weight W1 of the solid content of the silica abrasive grains in terms of SiO2 is 0.5 to 2.0.SELECTED DRAWING: None 【課題】砥粒の粒子径を安定に保つことができる研磨用組成物を提供する。【解決手段】研磨用組成物は、半導体研磨用の研磨用組成物であって、シリカ砥粒と、ケイ酸と、塩基性化合物と、水とを含み、シリカ砥粒の固形分の重量W1に対する前記研磨用組成物中のケイ酸イオンのSiO2換算の重量W2の比W2/W1が0.5〜2.0である。【選択図】なし