SUBSTRATE PROCESSING APPARATUS, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND PROGRAM

To suppress the deposition of reaction by-products in an exhaust piping.SOLUTION: There is provided a technology comprising: a processing chamber for processing a substrate; a processing chamber gas supply system for supplying processing gas, purge gas, or cleaning gas to the processing chamber; an...

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Bibliographische Detailangaben
Hauptverfasser:	ITAYA HIDEJI, HIROSE YOSHIRO
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	To suppress the deposition of reaction by-products in an exhaust piping.SOLUTION: There is provided a technology comprising: a processing chamber for processing a substrate; a processing chamber gas supply system for supplying processing gas, purge gas, or cleaning gas to the processing chamber; an exhaust piping for exhausting gas from the processing chamber; an exhaust piping gas supply system that is connected to a predetermined area having a risk of deposition in the exhaust piping and supplies cleaning contribution gas to the area having a risk of deposition; and a control unit for controlling the gas supply from the processing chamber gas supply system and the gas supply from the exhaust piping gas supply system.SELECTED DRAWING: Figure 1 【課題】排気配管への反応副生成物堆積を抑制することを可能にする。【解決手段】基板を処理する処理室と、処理室に処理ガス、パージガスまたはクリーニングガスを供給する処理室ガス供給系と、処理室からのガス排気を行う排気配管と、排気配管における所定の堆積危惧箇所に接続され、堆積危惧箇所にクリーニング寄与ガスを供給する排気配管ガス供給系と、処理室ガス供給系からのガス供給および排気配管ガス供給系からのガス供給を制御する制御部と、を有する技術が提供される。【選択図】図１