SINGLE CRYSTAL GROWTH METHOD AND SINGLE CRYSTAL GROWTH APPARATUS

To increase a manufacturing yield of a large-diameter silicon single crystal with no crystal defect by enhancing a PvPi margin.SOLUTION: A single crystal growth method for growing a silicon single crystal composed of a shoulder part, a body part and a tail part by a Czochralski method includes: a li...

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Hauptverfasser:	SAISHOJI TOSHIAKI, SUEWAKA RYOTA, IROKAWA SHINKO
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Zusammenfassung:	To increase a manufacturing yield of a large-diameter silicon single crystal with no crystal defect by enhancing a PvPi margin.SOLUTION: A single crystal growth method for growing a silicon single crystal composed of a shoulder part, a body part and a tail part by a Czochralski method includes: a lifting step P4A for lifting the body part of the silicon single crystal; and a cooling body pulling up and down step P4B for changing a distance between a lower edge of the cooling body and a liquid surface of a silicon melt by pulling up and down the cooling body, the cooling body being installed so as to surround the silicon single crystal and enhancing cooling of the silicon single crystal from an outer peripheral side of the silicon single crystal.SELECTED DRAWING: Figure 4 【課題】ＰｖＰｉマージンを拡大して結晶欠陥がない大口径シリコン単結晶の製造歩留まりを高める。【解決手段】チョクラルスキー法により、ショルダー部、ボディ部、およびテール部からなるシリコン単結晶を育成する単結晶育成方法であって、シリコン単結晶のボディ部を引き上げる引き上げ工程Ｐ４Ａと、引き上げ工程の実行中に、シリコン単結晶を囲繞するように設置され、シリコン単結晶の外周側からシリコン単結晶の冷却を促進させる冷却体を昇降させて、冷却体の下端とシリコン融液の液面との距離を変化させる冷却体昇降工程Ｐ４Ｂを有する単結晶育成方法を提供する。【選択図】図４