WAFER ONE-SIDE POLISHING METHOD, WAFER MANUFACTURING METHOD, AND WAFER ONE-SIDE POLISHING DEVICE

To provide a wafer one-side polishing method by which an amount of variation in flatness of a wafer outer peripheral part in a circumferential direction can reduced, a wafer manufacturing method, and a wafer one-side polishing device.SOLUTION: A wafer one-side polishing method comprises a polishing process in which a wafer held by a polishing head is pressed against an abrasive pad fixed to a surface of a surface plate, and polishing of a surface to be polished of the wafer is performed by rotating the polishing head and the surface plate. In the polishing process, the wafer is polished so that an autorotation rate of the wafer becomes 25 degrees/min or more and 60 degrees/min or less.SELECTED DRAWING: Figure 1 【課題】ウェーハ外周部の周方向の平坦度ばらつき量を低減できる、ウェーハの片面研磨方法、ウェーハの製造方法、およびウェーハの片面研磨装置を提供すること。【解決手段】ウェーハの片面研磨方法であって、研磨ヘッドに保持されたウェーハを、定盤の表面に固定された研磨パッドに押しつけ、前記研磨ヘッドおよび前記定盤を回転させることにより、前記ウェーハの被研磨面に研磨加工を施す研磨工程を備え、前記研磨工程において、前記ウェーハの自転率が２５度／ｍｉｎ以上６０度／ｍｉｎ以下となるように前記ウェーハを研磨することを特徴とするウェーハの片面研磨方法。【選択図】図１