SEMICONDUCTOR DEVICE
To accurately detect both the temperature of a switching element and the temperature of a reflux diode.SOLUTION: A semiconductor device includes a first serial circuit and a second serial circuit connected between a first electrode and a second electrode. The first serial circuit includes a first re...
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| Zusammenfassung: | To accurately detect both the temperature of a switching element and the temperature of a reflux diode.SOLUTION: A semiconductor device includes a first serial circuit and a second serial circuit connected between a first electrode and a second electrode. The first serial circuit includes a first resistor and a first diode connected in series between the first electrode and the second electrode. The second serial circuit includes a second resistor and a second diode connected in series between the first electrode and the second electrode. The direction of the first diode is opposite to that of the second diode. The first resistor and the second resistor have the characteristic of having higher electric resistance as the temperature is higher. The semiconductor substrate includes a switching element region and a reflux diode region. The first resistor is adjacent to the switching element region. The second resistor is adjacent to the reflux diode region.SELECTED DRAWING: Figure 1
【課題】 スイッチング素子の温度と還流ダイオードの温度の両方を正確に検出する。【解決手段】 半導体装置であって、第１電極と第２電極の間に接続された第１直列回路及び第２直列回路を有する。前記第１直列回路が、前記第１電極と前記第２電極の間に直列に接続された第１抵抗素子と第１ダイオードを有する。前記第２直列回路が、前記第１電極と前記第２電極の間に直列に接続された第２抵抗素子と第２ダイオードを有する。前記第１ダイオードの向きが前記第２ダイオードの向きと逆である。前記第１抵抗素子と前記第２抵抗素子が、温度が高いほど電気抵抗が高くなる特性を有する。前記半導体基板が、スイッチング素子領域と還流ダイオード領域を有する。前記第１抵抗素子が、前記スイッチング素子領域に隣接している。前記第２抵抗素子が、前記還流ダイオード領域に隣接している。【選択図】図１ |
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