SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING SYSTEM AND STORAGE MEDIUM
To increase productivity.SOLUTION: A substrate processing method comprises: a film-forming process liquid supplying step of supplying film-forming process liquid including a polar organic material to a substrate including Ge or III-group V material, provided that in the substrate, a wiring pattern m...
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Zusammenfassung: | To increase productivity.SOLUTION: A substrate processing method comprises: a film-forming process liquid supplying step of supplying film-forming process liquid including a polar organic material to a substrate including Ge or III-group V material, provided that in the substrate, a wiring pattern made of a metal material is at least partially exposed by dry etching or ashing; a volatilization step of volatilizing a volatile component; a step of putting, into a transport container, the substrate of which the wiring pattern is isolated from ambient air as a result of formation of a process film; a taking step of taking out the substrate in the transport container; and a peeling liquid supplying step of supplying the process film with peeling liquid containing a nonpolar solvent and a polar organic solvent after the taking step. The peeling liquid contains not water content, but the polar organic solvent so that the polar organic solvent slightly dissolves the process film and the nonpolar solvent permeates into an interface between the process film and the substrate.SELECTED DRAWING: Figure 4
【課題】生産性を向上させる。【解決手段】成膜処理液供給工程は、Ge又はIII−V族の材料からなる基板であってメタル材料からなる配線パターンの少なくとも一部がドライエッチングまたはアッシングによって露出した基板に対して極性有機物からなる成膜処理液を供給する。揮発工程は揮発成分を揮発させる。収容工程は処理膜が形成されたことで配線パターンが外気から遮断された基板を搬送容器へ収容する。取出工程は搬送容器に収容された基板を取り出す。剥離処理液供給工程は、取出工程後、処理膜に対して非極性溶媒および極性有機溶媒からなる剥離処理液を供給する。剥離処理液は、極性有機溶媒が処理膜をわずかに溶解させ、かつ、非極性溶媒が処理膜と基板との間の界面に浸透するように、水分を含まず極性有機溶媒を含む。【選択図】図4 |
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