DICING/DIE BONDING INTEGRAL FILM AND MANUFACTURING METHOD THEREOF, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

To provide a dicing/die bonding integral film comprising a pressure-sensitive adhesive layer having excellent pickup performance.SOLUTION: A film 10 comprise: a substrate layer 1; a pressure-sensitive adhesive layer 3 having a first surface F1 facing the substrate layer 1 and a second surface F2 on the opposite side thereof; and an adhesive layer 5 provided so as to cover the central portion of the second surface F2. The pressure-sensitive adhesive layer 3 includes a first region 3a including a region corresponding to the wafer attachment position in the adhesive layer 5 and a second region 3b located so as to surround the first region 3a, the first region 3a is a region in which the tack strength is reduced as compared with the second region 3b. A difference between the tack strength of the first region 3a of the pressure-sensitive adhesive layer 3 to the adhesive layer 5 and the tack strength of the second region 3b of the pressure-sensitive adhesive layer 3 to the adhesive layer 5 measured under a predetermined condition is 6.5 to 9.0 N/25 mm.SELECTED DRAWING: Figure 1 【課題】優れたピックアップ性を有する粘着剤層を備えるダイシング・ダイボンディング一体型フィルムを提供すること。【解決手段】フィルム１０は、基材層１と、基材層１と対面する第１の面Ｆ１及びその反対側の第２の面Ｆ２を有する粘着剤層３と、第２の面Ｆ２の中央部を覆うように設けられた接着剤層５とを備える。粘着剤層３は、接着剤層５におけるウェハの貼付け位置に対応する領域を含む第１の領域３ａと、それを囲むように位置する第２の領域３ｂとを有し、第１の領域３ａは、第２の領域３ｂと比較して粘着力が低下した状態の領域である。所定の条件で測定される、接着剤層５に対する粘着剤層３の第１の領域３ａの粘着力と接着剤層５に対する粘着剤層３の第２の領域３ｂの粘着力との差は、６．５〜９．０Ｎ／２５ｍｍである。【選択図】図１